A comparative study regarding effects of interfacial ferroelectric Bi4Ti3O12 (BTO) layer on electrical characteristics of Au/n-Si structures

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dc.contributor.authorYıldırım, Mert
dc.contributor.authorGökçen, Muharrem
dc.date.accessioned2020-04-30T22:38:38Z
dc.date.available2020-04-30T22:38:38Z
dc.date.issued2014
dc.departmentDÜ, Fen-Edebiyat Fakültesi, Fizik Bölümüen_US
dc.descriptionGokcen, Muharrem/0000-0001-9063-3028; YILDIRIM, Mert/0000-0002-8526-1802en_US
dc.descriptionWOS: 000336899800011en_US
dc.description.abstractPresent study focuses on the effects of interfacial ferroelectric BTO layer on the electrical characteristics of Au/n-Si structures, hence Au/n-Si (MS) and Au/BTO/n-Si (MFS) structures were fabricated and admittance measurements (capacitance-voltage: C-V and conductance-voltage: G/omega-V) of both structures were conducted between 10 kHz and 1MHz at room temperature. Results showed that C-V and G/omega-V characteristics were affected not only by frequency but also through deposition of BTO layer. Some effects can be listed as sharper peaks in C-V plots, higher capacitance and conductance values. Structure's series resistance (R-s) also decreased due to BTO layer. Interface states (N-ss) profiles of the structures were obtained using Hill-Coleman and high-low frequency capacitance (C-HF-C-LF). Some of the main electrical parameters were extracted from C-2-V plots using depletion capacitance approach. Furthermore, current-voltage characteristics of MS and MFS structures were presented.en_US
dc.description.sponsorshipDuzce University Scientific Research ProjectDuzce University [2010.05.02.056]en_US
dc.description.sponsorshipThis work is supported by Duzce University Scientific Research Project (project no. 2010.05.02.056).en_US
dc.identifier.doi10.1007/s12034-014-0649-2en_US
dc.identifier.endpage262en_US
dc.identifier.issn0250-4707
dc.identifier.issn0973-7669
dc.identifier.issue2en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage257en_US
dc.identifier.urihttps://doi.org/10.1007/s12034-014-0649-2
dc.identifier.urihttps://hdl.handle.net/20.500.12684/2326
dc.identifier.volume37en_US
dc.identifier.wosWOS:000336899800011en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherIndian Acad Sciencesen_US
dc.relation.ispartofBulletin Of Materials Scienceen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectMetal-ferroelectric-semiconductor (MFS) structuresen_US
dc.subjectBi4Ti3O12 (BTO)en_US
dc.subjectseries resistanceen_US
dc.subjectinterface statesen_US
dc.titleA comparative study regarding effects of interfacial ferroelectric Bi4Ti3O12 (BTO) layer on electrical characteristics of Au/n-Si structuresen_US
dc.typeArticleen_US

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