A comparative study regarding effects of interfacial ferroelectric Bi4Ti3O12 (BTO) layer on electrical characteristics of Au/n-Si structures
Yükleniyor...
Dosyalar
Tarih
2014
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Indian Acad Sciences
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
Present study focuses on the effects of interfacial ferroelectric BTO layer on the electrical characteristics of Au/n-Si structures, hence Au/n-Si (MS) and Au/BTO/n-Si (MFS) structures were fabricated and admittance measurements (capacitance-voltage: C-V and conductance-voltage: G/omega-V) of both structures were conducted between 10 kHz and 1MHz at room temperature. Results showed that C-V and G/omega-V characteristics were affected not only by frequency but also through deposition of BTO layer. Some effects can be listed as sharper peaks in C-V plots, higher capacitance and conductance values. Structure's series resistance (R-s) also decreased due to BTO layer. Interface states (N-ss) profiles of the structures were obtained using Hill-Coleman and high-low frequency capacitance (C-HF-C-LF). Some of the main electrical parameters were extracted from C-2-V plots using depletion capacitance approach. Furthermore, current-voltage characteristics of MS and MFS structures were presented.
Açıklama
Gokcen, Muharrem/0000-0001-9063-3028; YILDIRIM, Mert/0000-0002-8526-1802
WOS: 000336899800011
WOS: 000336899800011
Anahtar Kelimeler
Metal-ferroelectric-semiconductor (MFS) structures, Bi4Ti3O12 (BTO), series resistance, interface states
Kaynak
Bulletin Of Materials Science
WoS Q Değeri
Q3
Scopus Q Değeri
Q3
Cilt
37
Sayı
2
