On the anomalous peak at low and moderate frequency C-V curves of Al/SiO2/p-Si structure at the forward bias region
| dc.contributor.author | Yücedağ, İbrahim | |
| dc.date.accessioned | 2020-04-30T23:20:05Z | |
| dc.date.available | 2020-04-30T23:20:05Z | |
| dc.date.issued | 2009 | |
| dc.department | DÜ, Teknik Eğitim Fakültesi, Elektronik ve Bilgisayar Eğitimi Bölümü | en_US |
| dc.description | Condensed Matter Physics Conference of Balkan Countries -- MAY 26-28, 2008 -- Univ Mugla, Mugla, TURKEY | en_US |
| dc.description | WOS: 000268723400020 | en_US |
| dc.description.abstract | The low and moderate frequency capacitance-voltage (C-V) and conductance-voltage (G/omega-V) characteristics of the Al/SiO2/p-Si (MIS) structures were investigated by considering the effect of interface states (N-ss) and series resistance (R-s). Experimental results show that in the existence of R-s the forward bias C-V curves exhibit a peak at efficiently high bias region, and this peak positions shift toward lower bias voltage with decreasing frequency. In addition, the values of C and G/omega) of these structures increase with decreasing frequency. The doping densities of acceptor atoms (N-A) and barrier height (Phi(B)) obtained from the slope of the C-2 vs. V plot in the inversion region at each frequency. The values of N-A give a minimum at 0.7 kHz while the values of Phi(B) increase with increasing frequency. In addition, the values of R-s and N-ss calculated using Nicollian and Goetzberger and Hill-Coleman methods, respectively. It has been seen that the values of R-s and N-ss decrease with increasing frequency. | en_US |
| dc.identifier.endpage | 615 | en_US |
| dc.identifier.issn | 1842-6573 | |
| dc.identifier.issue | 6 | en_US |
| dc.identifier.scopusquality | Q4 | en_US |
| dc.identifier.startpage | 612 | en_US |
| dc.identifier.uri | https://hdl.handle.net/20.500.12684/3927 | |
| dc.identifier.volume | 3 | en_US |
| dc.identifier.wos | WOS:000268723400020 | en_US |
| dc.identifier.wosquality | Q4 | en_US |
| dc.indekslendigikaynak | Web of Science | en_US |
| dc.indekslendigikaynak | Scopus | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Natl Inst Optoelectronics | en_US |
| dc.relation.ispartof | Optoelectronics And Advanced Materials-Rapid Communications | en_US |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
| dc.rights | info:eu-repo/semantics/closedAccess | en_US |
| dc.subject | MIS structure | en_US |
| dc.subject | Frequency dependence | en_US |
| dc.subject | Insulator layer | en_US |
| dc.subject | Interface states | en_US |
| dc.subject | Series resistance | en_US |
| dc.title | On the anomalous peak at low and moderate frequency C-V curves of Al/SiO2/p-Si structure at the forward bias region | en_US |
| dc.type | Article | en_US |
