On the anomalous peak at low and moderate frequency C-V curves of Al/SiO2/p-Si structure at the forward bias region
Küçük Resim Yok
Tarih
2009
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Natl Inst Optoelectronics
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The low and moderate frequency capacitance-voltage (C-V) and conductance-voltage (G/omega-V) characteristics of the Al/SiO2/p-Si (MIS) structures were investigated by considering the effect of interface states (N-ss) and series resistance (R-s). Experimental results show that in the existence of R-s the forward bias C-V curves exhibit a peak at efficiently high bias region, and this peak positions shift toward lower bias voltage with decreasing frequency. In addition, the values of C and G/omega) of these structures increase with decreasing frequency. The doping densities of acceptor atoms (N-A) and barrier height (Phi(B)) obtained from the slope of the C-2 vs. V plot in the inversion region at each frequency. The values of N-A give a minimum at 0.7 kHz while the values of Phi(B) increase with increasing frequency. In addition, the values of R-s and N-ss calculated using Nicollian and Goetzberger and Hill-Coleman methods, respectively. It has been seen that the values of R-s and N-ss decrease with increasing frequency.
Açıklama
Condensed Matter Physics Conference of Balkan Countries -- MAY 26-28, 2008 -- Univ Mugla, Mugla, TURKEY
WOS: 000268723400020
WOS: 000268723400020
Anahtar Kelimeler
MIS structure, Frequency dependence, Insulator layer, Interface states, Series resistance
Kaynak
Optoelectronics And Advanced Materials-Rapid Communications
WoS Q Değeri
Q4
Scopus Q Değeri
Q4
Cilt
3
Sayı
6
