Analysis of surface states and series resistance in Au/n-Si Schottky diodes with insulator layer using current-voltage and admittance-voltage characteristics

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dc.contributor.authorAltındal, Şemsettin
dc.contributor.authorYücedağ, İbrahim
dc.contributor.authorTataroğlu, Adem
dc.date.accessioned2020-04-30T22:39:21Z
dc.date.available2020-04-30T22:39:21Z
dc.date.issued2009
dc.departmentDÜ, Teknik Eğitim Fakültesi, Elektronik ve Bilgisayar Eğitimi Bölümüen_US
dc.descriptionTataroglu, Adem/0000-0003-2074-574Xen_US
dc.descriptionWOS: 000272057200001en_US
dc.description.abstractIn order to good interpret the experimentally observed Au/n-Si (metal-semiconductor) Schottky diodes with thin insulator layer (18 angstrom) parameters such as the zero-bias barrier height (Phi(bo)), ideality factor (n), series resistance (R-s) and surface states have been investigated using current-voltage (I-V), capacitance-frequency (C-f) and conductance-frequency (G-f) techniques. The forward and reverse bias I-V characteristics of Au/n-Si (MS) Schottky diode were measured at room temperature. In addition, C-f and G-f characteristics were measured in the frequency range of 1 kHz-1 MHz. The higher values of C and G at low frequencies were attributed to the insulator layer and surface states. Under intermediate forward bias, the semi-logarithmic Ln (I)-V plot shows a good linear region. From this region, the slope and the intercept of this plot on the current axis allow to determine the ideality factor (n). the zero-barrier height (Phi(bo)) and the saturation current (I-s) evaluated to 2.878, 0.652 and 3.61 x 10(-7) A, respectively. The diode shows non-ideal I-V behavior with ideality factor greater than unity. This behavior can be attributed to the interfacial insulator layer, the surface states, series resistance and the formation barrier inhomogeneity at metal-semiconductor interface. From the C-f and G-f characteristics, the energy distribution of surface states (N-ss) and their relaxation time (tau) have been determined in the energy range of (E-c-0.493E(v))-(E-c-0.610) eV taking into account the forward bias I-V data. The values of N-ss and tau change from 9.35 x 10(13) eV(-1) cm(-2) to 2.73 x 10(13) eV(-1) cm(-2) and 1.75 x 10(-5) s to 4.50 x 10(-4) s, respectively. (C) 2009 Elsevier Ltd. All rights reserved.en_US
dc.description.sponsorshipGazi University Scientific Research Project (BAB)Gazi University [FEF 05/2009-34, FEF 05/ 2009-56]en_US
dc.description.sponsorshipThis work is supported by Gazi University Scientific Research Project (BAB), FEF-Research Project FEF 05/2009-34 and FEF 05/ 2009-56.en_US
dc.identifier.doi10.1016/j.vacuum.2009.07.003en_US
dc.identifier.endpage368en_US
dc.identifier.issn0042-207X
dc.identifier.issue3en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage363en_US
dc.identifier.urihttps://doi.org/10.1016/j.vacuum.2009.07.003
dc.identifier.urihttps://hdl.handle.net/20.500.12684/2694
dc.identifier.volume84en_US
dc.identifier.wosWOS:000272057200001en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherPergamon-Elsevier Science Ltden_US
dc.relation.ispartofVacuumen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMS diodesen_US
dc.subjectInsulator layeren_US
dc.subjectSurface statesen_US
dc.subjectRelaxation timeen_US
dc.subjectFrequency dependenceen_US
dc.titleAnalysis of surface states and series resistance in Au/n-Si Schottky diodes with insulator layer using current-voltage and admittance-voltage characteristicsen_US
dc.typeArticleen_US

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