Investigation on dielectric properties of atomic layer deposited Al2O3 dielectric films

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dc.contributor.authorYıldız, Dilber Esra
dc.contributor.authorYıldırım, Mert
dc.contributor.authorGökçen, Muharrem
dc.date.accessioned2020-04-30T23:18:43Z
dc.date.available2020-04-30T23:18:43Z
dc.date.issued2014
dc.departmentDÜ, Fen-Edebiyat Fakültesi, Fizik Bölümüen_US
dc.descriptionYILDIRIM, Mert/0000-0002-8526-1802; Gokcen, Muharrem/0000-0001-9063-3028; Yildiz, Dilber Esra/0000-0003-2212-199Xen_US
dc.descriptionWOS: 000335965300024en_US
dc.description.abstractAl/Al2O3/p-Si Schottky barrier diodes (SBDs) were fabricated using atomic layer deposition technique in order to investigate dielectric properties of SBDs. For this purpose, admittance measurements were conducted at room temperature between -1V and 3V in the frequency range of 10 kHz and 1MHz. In addition to the investigation of Al2O3 morphology using atomic force microscope, dielectric parameters; such as dielectric constant (epsilon'), dielectric loss (epsilon ''), dielectric loss tangent (tan delta), and real and imaginary parts of dielectric modulus (M' and M '', respectively), were calculated and effect of frequency on these parameters of Al/Al2O3/p-Si SBDs was discussed. Variations in these parameters at low frequencies were associated with the effect of interface states in low frequency region. Besides dielectric parameters, ac electrical conductivity of these SBDs was also investigated. (C) 2014 American Vacuum Society.en_US
dc.description.sponsorshipHitit University BAP research projectsHitit University [FEF01.13.003]en_US
dc.description.sponsorshipThis work was supported by Hitit University BAP research projects FEF01.13.003.en_US
dc.identifier.doi10.1116/1.4870593en_US
dc.identifier.issn0734-2101
dc.identifier.issn1520-8559
dc.identifier.issue3en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1116/1.4870593
dc.identifier.urihttps://hdl.handle.net/20.500.12684/3493
dc.identifier.volume32en_US
dc.identifier.wosWOS:000335965300024en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherA V S Amer Inst Physicsen_US
dc.relation.ispartofJournal Of Vacuum Science & Technology Aen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.titleInvestigation on dielectric properties of atomic layer deposited Al2O3 dielectric filmsen_US
dc.typeArticleen_US

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