Investigation on dielectric properties of atomic layer deposited Al2O3 dielectric films
Yükleniyor...
Dosyalar
Tarih
2014
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
A V S Amer Inst Physics
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Al/Al2O3/p-Si Schottky barrier diodes (SBDs) were fabricated using atomic layer deposition technique in order to investigate dielectric properties of SBDs. For this purpose, admittance measurements were conducted at room temperature between -1V and 3V in the frequency range of 10 kHz and 1MHz. In addition to the investigation of Al2O3 morphology using atomic force microscope, dielectric parameters; such as dielectric constant (epsilon'), dielectric loss (epsilon ''), dielectric loss tangent (tan delta), and real and imaginary parts of dielectric modulus (M' and M '', respectively), were calculated and effect of frequency on these parameters of Al/Al2O3/p-Si SBDs was discussed. Variations in these parameters at low frequencies were associated with the effect of interface states in low frequency region. Besides dielectric parameters, ac electrical conductivity of these SBDs was also investigated. (C) 2014 American Vacuum Society.
Açıklama
YILDIRIM, Mert/0000-0002-8526-1802; Gokcen, Muharrem/0000-0001-9063-3028; Yildiz, Dilber Esra/0000-0003-2212-199X
WOS: 000335965300024
WOS: 000335965300024
Anahtar Kelimeler
Kaynak
Journal Of Vacuum Science & Technology A
WoS Q Değeri
Q1
Scopus Q Değeri
Q2
Cilt
32
Sayı
3
