Dielectric characteristics of gamma irradiated Au/SnO2/n-Si/Au (MOS) capacitor

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dc.contributor.authorTataroğlu, Adem
dc.contributor.authorYıldırım, Mert
dc.contributor.authorBaran, Halil Mert
dc.date.accessioned2020-05-01T09:11:25Z
dc.date.available2020-05-01T09:11:25Z
dc.date.issued2014
dc.departmentDÜ, Fen-Edebiyat Fakültesi, Fizik Bölümüen_US
dc.descriptionInternational Semiconductor Science and Technology Conference (ISSTC) -- JAN 13-15, 2014 -- Istanbul, TURKEYen_US
dc.descriptionTataroglu, Adem/0000-0003-2074-574X; YILDIRIM, Mert/0000-0002-8526-1802en_US
dc.descriptionWOS: 000345645000016en_US
dc.description.abstractThe dielectric characteristics of gamma irradiated Au/SnO2/n-Si/Au (MOS) capacitor were studied. The MOS capacitor was irradiated by a Co-60 gamma radiation source with a dose rate of 0.69 kGy/h. The dielectric parameters such as dielectric constant (epsilon'), dielectric loss (epsilon ''), loss factor (tan delta) and ac electrical conductivity (sigma(ac)) were calculated from the capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements. It is found that the C and G/omega values decrease with the increasing total dose due to the irradiation-induced defects at the interface. Also, the calculated values of epsilon', epsilon '' and sigma(ac) are found to decrease with an increased radiation dose. This result indicates that the dielectric characteristics of the MOS capacitor are sensitive to gamma-ray dose. (C) 2014 Elsevier Ltd. All rights reserved.en_US
dc.identifier.doi10.1016/j.mssp.2014.06.053en_US
dc.identifier.endpage93en_US
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage89en_US
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2014.06.053
dc.identifier.urihttps://hdl.handle.net/20.500.12684/5575
dc.identifier.volume28en_US
dc.identifier.wosWOS:000345645000016en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Sci Ltden_US
dc.relation.ispartofMaterials Science In Semiconductor Processingen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMOS capacitoren_US
dc.subjectRadiation effecten_US
dc.subjectDielectric Constanten_US
dc.subjectDielectric lossen_US
dc.subjectElectrical conductivityen_US
dc.titleDielectric characteristics of gamma irradiated Au/SnO2/n-Si/Au (MOS) capacitoren_US
dc.typeArticleen_US

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