Dielectric characteristics of gamma irradiated Au/SnO2/n-Si/Au (MOS) capacitor
Yükleniyor...
Dosyalar
Tarih
2014
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Sci Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The dielectric characteristics of gamma irradiated Au/SnO2/n-Si/Au (MOS) capacitor were studied. The MOS capacitor was irradiated by a Co-60 gamma radiation source with a dose rate of 0.69 kGy/h. The dielectric parameters such as dielectric constant (epsilon'), dielectric loss (epsilon ''), loss factor (tan delta) and ac electrical conductivity (sigma(ac)) were calculated from the capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements. It is found that the C and G/omega values decrease with the increasing total dose due to the irradiation-induced defects at the interface. Also, the calculated values of epsilon', epsilon '' and sigma(ac) are found to decrease with an increased radiation dose. This result indicates that the dielectric characteristics of the MOS capacitor are sensitive to gamma-ray dose. (C) 2014 Elsevier Ltd. All rights reserved.
Açıklama
International Semiconductor Science and Technology Conference (ISSTC) -- JAN 13-15, 2014 -- Istanbul, TURKEY
Tataroglu, Adem/0000-0003-2074-574X; YILDIRIM, Mert/0000-0002-8526-1802
WOS: 000345645000016
Tataroglu, Adem/0000-0003-2074-574X; YILDIRIM, Mert/0000-0002-8526-1802
WOS: 000345645000016
Anahtar Kelimeler
MOS capacitor, Radiation effect, Dielectric Constant, Dielectric loss, Electrical conductivity
Kaynak
Materials Science In Semiconductor Processing
WoS Q Değeri
Q2
Scopus Q Değeri
Q1
Cilt
28
