Dielectric Properties of Au/PVA (Cobalt-Doped)/n-Si Photoconductive Diodes
| dc.contributor.author | Gökçen, Muharrem | |
| dc.date.accessioned | 2020-05-01T09:11:25Z | |
| dc.date.available | 2020-05-01T09:11:25Z | |
| dc.date.issued | 2013 | |
| dc.department | DÜ, Fen-Edebiyat Fakültesi, Fizik Bölümü | en_US |
| dc.description | Gokcen, Muharrem/0000-0001-9063-3028; | en_US |
| dc.description | WOS: 000312660100014 | en_US |
| dc.description.abstract | The voltage (V) and frequency (f) dependence of dielectric parameters such as the dielectric constant (epsilon'), dielectric loss (epsilon aEuro(3)), dielectric loss tangent (tan delta), real and imaginary parts of electrical modulus (M' and MaEuro(3)), and alternating-current (AC) electrical conductivity (sigma (AC)) of Au/PVA (cobalt-doped)/n-Si structures have been investigated by using experimental admittance measurements conducted at room temperature. The values of epsilon', epsilon aEuro(3), and tan delta were found to be strong functions of voltage and frequency, especially at low frequencies in the positive voltage region. It was observed that the values of epsilon' and epsilon aEuro(3) increase as the frequency decreases. The M' values increase with increasing frequency due to increasing dielectric relaxation, while MaEuro(3) values, in general, remain stable as frequency is changed. The sigma (AC) values at each bias voltage increase with increasing frequency. | en_US |
| dc.description.sponsorship | Duzce University Scientific Research ProjectDuzce University [2012.05.02.110] | en_US |
| dc.description.sponsorship | This work is supported by Duzce University Scientific Research Project (project no. 2012.05.02.110). Also, the author would like to thank Dr. Ibrahim Uslu (Department of Chemistry Education, Gazi University, Turkey), Dr. Tuncay Tunc (Department of Science Education, Aksaray University, Turkey), and Dr. Semsettin Altindal (Department of Physics, Gazi University, Turkey) for providing the material and its spinning. | en_US |
| dc.identifier.doi | 10.1007/s11664-012-2332-y | en_US |
| dc.identifier.endpage | 108 | en_US |
| dc.identifier.issn | 0361-5235 | |
| dc.identifier.issn | 1543-186X | |
| dc.identifier.issue | 1 | en_US |
| dc.identifier.scopusquality | Q3 | en_US |
| dc.identifier.startpage | 103 | en_US |
| dc.identifier.uri | https://doi.org/10.1007/s11664-012-2332-y | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12684/5577 | |
| dc.identifier.volume | 42 | en_US |
| dc.identifier.wos | WOS:000312660100014 | en_US |
| dc.identifier.wosquality | Q2 | en_US |
| dc.indekslendigikaynak | Web of Science | en_US |
| dc.indekslendigikaynak | Scopus | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Springer | en_US |
| dc.relation.ispartof | Journal Of Electronic Materials | en_US |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
| dc.rights | info:eu-repo/semantics/closedAccess | en_US |
| dc.subject | Organic PVA layer | en_US |
| dc.subject | MPS structures | en_US |
| dc.subject | dielectric properties | en_US |
| dc.subject | electric modulus | en_US |
| dc.subject | AC electrical conductivity | en_US |
| dc.title | Dielectric Properties of Au/PVA (Cobalt-Doped)/n-Si Photoconductive Diodes | en_US |
| dc.type | Article | en_US |
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