Dielectric Properties of Au/PVA (Cobalt-Doped)/n-Si Photoconductive Diodes
Yükleniyor...
Dosyalar
Tarih
2013
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The voltage (V) and frequency (f) dependence of dielectric parameters such as the dielectric constant (epsilon'), dielectric loss (epsilon aEuro(3)), dielectric loss tangent (tan delta), real and imaginary parts of electrical modulus (M' and MaEuro(3)), and alternating-current (AC) electrical conductivity (sigma (AC)) of Au/PVA (cobalt-doped)/n-Si structures have been investigated by using experimental admittance measurements conducted at room temperature. The values of epsilon', epsilon aEuro(3), and tan delta were found to be strong functions of voltage and frequency, especially at low frequencies in the positive voltage region. It was observed that the values of epsilon' and epsilon aEuro(3) increase as the frequency decreases. The M' values increase with increasing frequency due to increasing dielectric relaxation, while MaEuro(3) values, in general, remain stable as frequency is changed. The sigma (AC) values at each bias voltage increase with increasing frequency.
Açıklama
Gokcen, Muharrem/0000-0001-9063-3028;
WOS: 000312660100014
WOS: 000312660100014
Anahtar Kelimeler
Organic PVA layer, MPS structures, dielectric properties, electric modulus, AC electrical conductivity
Kaynak
Journal Of Electronic Materials
WoS Q Değeri
Q2
Scopus Q Değeri
Q3
Cilt
42
Sayı
1
