Effect of Al0.1Ga0.9As thickness on the structural, optical, thermal, and electrical properties of (Al0.1 Ga 0.9As)/GaAs heterojunctions

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dc.authorscopusid57374565600
dc.authorscopusid16174728400
dc.authorscopusid56292408700
dc.authorscopusid56267689900
dc.authorscopusid56235566900
dc.authorscopusid6602167805
dc.authorscopusid56582217700
dc.contributor.authorAl-Naghmaish, Aishah
dc.contributor.authorGhrib, Taher
dc.contributor.authorDakhlaoui, H.
dc.contributor.authorAL-Saleem, N.K.
dc.contributor.authorErcan, F.
dc.contributor.authorKayed, Tarek S.
dc.contributor.authorElibol, Erdem
dc.date.accessioned2023-07-26T11:50:37Z
dc.date.available2023-07-26T11:50:37Z
dc.date.issued2023
dc.departmentDÜ, Mühendislik Fakültesi, Elektrik-Elektronik Mühendisliği Bölümüen_US
dc.description.abstractAl0.1Ga0.9As nano-films of various thicknesses were deposited on GaAs substrate and examined using Scanning Electron Microscopy (SEM), X-Ray Diffraction (XRD), UV–Visible spectrophotometry, Photoluminescence (PL), Electrochemical Impedance Spectroscopy (EIS), and Photothermal Deflection (PTD). The PTD technique is used to analyze the effect of Al0.1Ga0.9As thickness on thermal properties and showed its sensitivity to weak structural changes. By increasing the Al0.1Ga0.9As thickness, the crystallinity was degraded, an infrared emission centered at 997.4 nm whose intensity is the highest for 50 nm was observed. A pn junction was formed for thicknesses higher than 400 nm, the band gap was increased from 1.59 to 1.68 eV. The thermal conductivity increased from 35.3 to 37.3 W m? 1 K?1 and the thermal diffusivity increased from 0.195 to 0.22 cm2 s?1. As a result of this investigation, the Al0.1Ga0.9As/GaAs can be considered for potential applications in photoelectric and thermoelectric devices. © 2023 The Author(s)en_US
dc.description.sponsorshipImam Abdulrahman Bin Faisal University, IAU: 2019190en_US
dc.description.sponsorshipThis work was supported by Imam Abdulrahman Bin Faisal University , Saudi Arabia through Grant NO. 2019190 .en_US
dc.identifier.doi10.1016/j.micrna.2023.207536
dc.identifier.issn2773-0123
dc.identifier.scopus2-s2.0-85149386756en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.urihttps://doi.org/10.1016/j.micrna.2023.207536
dc.identifier.urihttps://hdl.handle.net/20.500.12684/12390
dc.identifier.volume177en_US
dc.identifier.wosWOS:001029664200001en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorElibol, Erdem
dc.institutionauthorErcan, İsmail
dc.institutionauthorYıldız, Mesut
dc.language.isoenen_US
dc.publisherElsevier Ltden_US
dc.relation.ispartofMicro and Nanostructuresen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.snmz$2023V1Guncelleme$en_US
dc.subjectelectrochemical Impedance spectroscopyen_US
dc.subjectHeterojunctionsen_US
dc.subjectPhotothermal deflection techniqueen_US
dc.subjectThermal conductivityen_US
dc.subjectThermal diffusivityen_US
dc.subjectCrystallinityen_US
dc.subjectEnergy gapen_US
dc.subjectGallium arsenideen_US
dc.subjectHeterojunctionsen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectScanning electron microscopyen_US
dc.subjectThermal conductivityen_US
dc.subjectCristallinityen_US
dc.subjectElectrochemical-impedance spectroscopiesen_US
dc.subjectGaAs substratesen_US
dc.subjectNano filmsen_US
dc.subjectPhoto-thermal deflection techniqueen_US
dc.subjectPhotothermal deflectionsen_US
dc.subjectProperties of Alen_US
dc.subjectThermal and electrical propertiesen_US
dc.subjectUV-visible spectrophotometryen_US
dc.subjectX- ray diffractionsen_US
dc.subjectElectrochemical impedance spectroscopyen_US
dc.titleEffect of Al0.1Ga0.9As thickness on the structural, optical, thermal, and electrical properties of (Al0.1 Ga 0.9As)/GaAs heterojunctionsen_US
dc.typeArticleen_US

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