Effect of Al0.1Ga0.9As thickness on the structural, optical, thermal, and electrical properties of (Al0.1 Ga 0.9As)/GaAs heterojunctions
Yükleniyor...
Dosyalar
Tarih
2023
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Al0.1Ga0.9As nano-films of various thicknesses were deposited on GaAs substrate and examined using Scanning Electron Microscopy (SEM), X-Ray Diffraction (XRD), UV–Visible spectrophotometry, Photoluminescence (PL), Electrochemical Impedance Spectroscopy (EIS), and Photothermal Deflection (PTD). The PTD technique is used to analyze the effect of Al0.1Ga0.9As thickness on thermal properties and showed its sensitivity to weak structural changes. By increasing the Al0.1Ga0.9As thickness, the crystallinity was degraded, an infrared emission centered at 997.4 nm whose intensity is the highest for 50 nm was observed. A pn junction was formed for thicknesses higher than 400 nm, the band gap was increased from 1.59 to 1.68 eV. The thermal conductivity increased from 35.3 to 37.3 W m? 1 K?1 and the thermal diffusivity increased from 0.195 to 0.22 cm2 s?1. As a result of this investigation, the Al0.1Ga0.9As/GaAs can be considered for potential applications in photoelectric and thermoelectric devices. © 2023 The Author(s)
Açıklama
Anahtar Kelimeler
electrochemical Impedance spectroscopy, Heterojunctions, Photothermal deflection technique, Thermal conductivity, Thermal diffusivity, Crystallinity, Energy gap, Gallium arsenide, Heterojunctions, III-V semiconductors, Scanning electron microscopy, Thermal conductivity, Cristallinity, Electrochemical-impedance spectroscopies, GaAs substrates, Nano films, Photo-thermal deflection technique, Photothermal deflections, Properties of Al, Thermal and electrical properties, UV-visible spectrophotometry, X- ray diffractions, Electrochemical impedance spectroscopy
Kaynak
Micro and Nanostructures
WoS Q Değeri
Q2
Scopus Q Değeri
N/A
Cilt
177
