Comparative investigation of electronic parameters of low voltage organic field-effect transistors with variable capacitance non-ionic gel gate dielectrics

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dc.contributor.authorYardım, Tayfun
dc.contributor.authorYücedağ, İbrahim
dc.contributor.authorAllı, Sema
dc.contributor.authorAllı, Abdulkadir
dc.contributor.authorDemir, Ahmet
dc.contributor.authorKösemen, Arif
dc.date.accessioned2020-04-30T22:41:07Z
dc.date.available2020-04-30T22:41:07Z
dc.date.issued2019
dc.departmentDÜ, Mühendislik Fakültesi, Bilgisayar Mühendisliği Bölümüen_US
dc.descriptionkosemen, arif/0000-0002-7572-7963; Yardim, Tayfun/0000-0002-5223-9801en_US
dc.descriptionWOS: 000480665600037en_US
dc.description.abstractNon-ionic gel dielectrics (NIGDs) have high effective capacitances (C-EFF) which can be used to reduce the operating voltage of the organic field-effect transistors (OFETs). Limited work has been carried out about these kinds of dielectrics although they have advantages of low cost and easy production. Besides, by mixing propylene carbonate (PC) with various kinds of polymers in order to tune the C-EFF of the blend, electronic parameter performance of the OFETs can be improved. In this study, regioregular poly(3-hexylthiophene-2,5-diyl) (rr-P3HT) based OFETs were fabricated. Specifying the poly(methyl-acrylate) (PMA) as a reference dielectric and adjusting the soybean oil to methyl acrylate weight ratio in the polymerization process to form copolymers of PMA, totally three types of dielectrics were synthesized and transformed into a gel state to obtain the reduced C-EFF. Gel dielectrics were named according to the soybean oil to methyl acrylate weight ratio. Such that, %0 ratio stands for NIGDO, %8 ratio stands for NIGD1 and %11 ratio stands for NIGD2 and OFETs fabricated with these NIGDs were named with regard to these names (NIGOFET0, NIGOFET1, and NIGOFET2). After the electrical characterization, it was seen that mobility enhanced as the C-EFF decreased as predicted. It could be attributed to a formation of less self-localization of the charge carriers in the semiconductor-dielectric interface. Moreover, it was seen that NIGOFET1 had the lowest Subthreshold Swing (SS) and off-current (I-OFF) consequently the highest on-to-off current ratio (I-ON/I-OFF). It implied that it had better insulation property and semiconductor-dielectric interface compared to the other NIGOFETs.en_US
dc.description.sponsorshipDuzce University Scientific Research ProjectsDuzce University [2017.07.02.621, 2015.05.03.381]en_US
dc.description.sponsorshipThis work was supported by the Duzce University Scientific Research Projects unit under Grant [2017.07.02.621] and [2015.05.03.381].en_US
dc.identifier.doi10.1016/j.mee.2019.110981en_US
dc.identifier.issn0167-9317
dc.identifier.issn1873-5568
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1016/j.mee.2019.110981
dc.identifier.urihttps://hdl.handle.net/20.500.12684/3127
dc.identifier.volume215en_US
dc.identifier.wosWOS:000480665600037en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofMicroelectronic Engineeringen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectEffective capacitanceen_US
dc.subjectMobilityen_US
dc.subjectNon-ionic gel dielectrics (NIGDs) organic field-effect transistors (OFETs)en_US
dc.titleComparative investigation of electronic parameters of low voltage organic field-effect transistors with variable capacitance non-ionic gel gate dielectricsen_US
dc.typeArticleen_US

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