Comparative investigation of electronic parameters of low voltage organic field-effect transistors with variable capacitance non-ionic gel gate dielectrics
Yükleniyor...
Dosyalar
Tarih
2019
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Non-ionic gel dielectrics (NIGDs) have high effective capacitances (C-EFF) which can be used to reduce the operating voltage of the organic field-effect transistors (OFETs). Limited work has been carried out about these kinds of dielectrics although they have advantages of low cost and easy production. Besides, by mixing propylene carbonate (PC) with various kinds of polymers in order to tune the C-EFF of the blend, electronic parameter performance of the OFETs can be improved. In this study, regioregular poly(3-hexylthiophene-2,5-diyl) (rr-P3HT) based OFETs were fabricated. Specifying the poly(methyl-acrylate) (PMA) as a reference dielectric and adjusting the soybean oil to methyl acrylate weight ratio in the polymerization process to form copolymers of PMA, totally three types of dielectrics were synthesized and transformed into a gel state to obtain the reduced C-EFF. Gel dielectrics were named according to the soybean oil to methyl acrylate weight ratio. Such that, %0 ratio stands for NIGDO, %8 ratio stands for NIGD1 and %11 ratio stands for NIGD2 and OFETs fabricated with these NIGDs were named with regard to these names (NIGOFET0, NIGOFET1, and NIGOFET2). After the electrical characterization, it was seen that mobility enhanced as the C-EFF decreased as predicted. It could be attributed to a formation of less self-localization of the charge carriers in the semiconductor-dielectric interface. Moreover, it was seen that NIGOFET1 had the lowest Subthreshold Swing (SS) and off-current (I-OFF) consequently the highest on-to-off current ratio (I-ON/I-OFF). It implied that it had better insulation property and semiconductor-dielectric interface compared to the other NIGOFETs.
Açıklama
kosemen, arif/0000-0002-7572-7963; Yardim, Tayfun/0000-0002-5223-9801
WOS: 000480665600037
WOS: 000480665600037
Anahtar Kelimeler
Effective capacitance, Mobility, Non-ionic gel dielectrics (NIGDs) organic field-effect transistors (OFETs)
Kaynak
Microelectronic Engineering
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
215
