Dielectric properties and electric modulus of Au/PPy/n-Si (MPS) type Schottky barrier diodes (SBDS) as a function of frequency and applied bias voltage

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dc.contributor.authorYücedağ, İbrahim
dc.contributor.authorErsöz, Gülçin
dc.contributor.authorGümüş, Ahmet
dc.contributor.authorAltındal, Şemsettin
dc.date.accessioned2020-05-01T09:11:25Z
dc.date.available2020-05-01T09:11:25Z
dc.date.issued2015
dc.departmentDÜ, Teknoloji Fakültesi, Bilgisayar Mühendisliği Bölümüen_US
dc.descriptionWOS: 000354761800001en_US
dc.description.abstractAu/PPy/n-Si Schottky barrier diodes (SBDs) were fabricated by forming polypyrrole (PPy) organic layer on n-Si using the spin coating technique. Frequency-dependent dielectric constant (epsilon'), dielectric loss (epsilon ''), loss tangent (tan delta), real and imaginary parts of electrical modulus (M' and M '') and AC electrical conductivity (sigma(ac)) parameters of the structure were investigated in the frequency range of 10-500 kHz. It was found that the values of the epsilon', epsilon '' and tan delta, in general, decrease with increasing frequency while an increase is observed in sigma(ac), M' and M ''. The tan delta and M '' also exhibit a peak at about zero-bias voltage, while peak intensity weakens with increasing frequency. The values of epsilon' and M' decrease with increasing voltage while an increase is observed in epsilon '', tan delta sigma(ac) and M ''. These changes in epsilon', epsilon '', tan delta, M', M '' and sigma(ac) values was attributed to surface charge polarization and the particular density distribution of surface states localized at PPy/n-Si interface.en_US
dc.description.sponsorshipDuzce University BAP research ProjectDuzce University [2013.07.02.204]; Nigde University BAP research ProjectOmer Halis Demir University [2012/022]en_US
dc.description.sponsorshipThis work is supported by Duzce University BAP research Project No. 2013.07.02.204 and Nigde University BAP research Project No. 2012/022.en_US
dc.identifier.doi10.1142/S0217979215500757en_US
dc.identifier.issn0217-9792
dc.identifier.issn1793-6578
dc.identifier.issue13en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.urihttps://doi.org/10.1142/S0217979215500757
dc.identifier.urihttps://hdl.handle.net/20.500.12684/5576
dc.identifier.volume29en_US
dc.identifier.wosWOS:000354761800001en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherWorld Scientific Publ Co Pte Ltden_US
dc.relation.ispartofInternational Journal Of Modern Physics Ben_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectDielectric propertiesen_US
dc.subjectSchottky barrier diode (SBD)en_US
dc.subjectfrequency and voltage dependenceen_US
dc.subjectpolypyrrole (PPy)en_US
dc.subjectAC electrical conductivityen_US
dc.subjectelectrical modulusen_US
dc.titleDielectric properties and electric modulus of Au/PPy/n-Si (MPS) type Schottky barrier diodes (SBDS) as a function of frequency and applied bias voltageen_US
dc.typeArticleen_US

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