Dielectric properties and electric modulus of Au/PPy/n-Si (MPS) type Schottky barrier diodes (SBDS) as a function of frequency and applied bias voltage
Yükleniyor...
Dosyalar
Tarih
2015
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
World Scientific Publ Co Pte Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Au/PPy/n-Si Schottky barrier diodes (SBDs) were fabricated by forming polypyrrole (PPy) organic layer on n-Si using the spin coating technique. Frequency-dependent dielectric constant (epsilon'), dielectric loss (epsilon ''), loss tangent (tan delta), real and imaginary parts of electrical modulus (M' and M '') and AC electrical conductivity (sigma(ac)) parameters of the structure were investigated in the frequency range of 10-500 kHz. It was found that the values of the epsilon', epsilon '' and tan delta, in general, decrease with increasing frequency while an increase is observed in sigma(ac), M' and M ''. The tan delta and M '' also exhibit a peak at about zero-bias voltage, while peak intensity weakens with increasing frequency. The values of epsilon' and M' decrease with increasing voltage while an increase is observed in epsilon '', tan delta sigma(ac) and M ''. These changes in epsilon', epsilon '', tan delta, M', M '' and sigma(ac) values was attributed to surface charge polarization and the particular density distribution of surface states localized at PPy/n-Si interface.
Açıklama
WOS: 000354761800001
Anahtar Kelimeler
Dielectric properties, Schottky barrier diode (SBD), frequency and voltage dependence, polypyrrole (PPy), AC electrical conductivity, electrical modulus
Kaynak
International Journal Of Modern Physics B
WoS Q Değeri
Q3
Scopus Q Değeri
Q3
Cilt
29
Sayı
13
