Organic field effect transistor with a novel poly(linoleic acid)-g-poly(methyl methacrylate)-g-poly(D,L-lactide) graft copolymer insulator using a PEDOT:PSS composite electrode
Yükleniyor...
Dosyalar
Tarih
2019
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
This study presents a one-pot process used to synthesize novel poly(linoleic acid)-g-poly(methyl methacrylate)-g-poly(D,L-lactide) (PLina-g-PMMA-g-PLA (PLiMALA-3)) graft copolymers. The process was carried out by combining the free radical polymerization (FRP) of methyl methacrylate with the ring-opening polymerization (ROP) of D,L-lactide from polymeric linolenic acid having peroxide groups in the main chain. The characterization of the graft copolymers was performed using proton nuclear magnetic resonance, gel permeation chromatography, thermal gravimetric analysis (TGA) and differential scanning calorimetry (DSC) techniques. Afterwards, an organic field effect transistor (OFET) was fabricated with the novel poly(linoleic acid)-g-poly(methyl methacrylate)-g-poly(D,L-lactide) graft copolymer (PLiMALA-3) as the insulator layer. Poly(3-hexylthiophene) (P3HT) was used as the active layer and pre-patterned OFET substrates were used as the source/drain electrodes. In order to measure capacitance, an ITO/(PLiMALA-3)/PEDOT:PSS structure was prepared using the same method. For electrical characterization of the OFET, the device was held in the dark at room temperature in ambient air in order to determine the characteristics of the output and transfer current-voltage (I-V). The main parameters of the device, which included the threshold voltage (V-Th), field effect mobility ((FET)) and current on/off ratio (I-on/I-off), were determined by measuring the capacitance-frequency (C-f) plot of the ITO/Polymer/PEDOT:PSS structure. Results showed that the fabricated OFET device exhibited good performance including low V-Th, comparable mobility and I-on/I-off.
Açıklama
kosemen, arif/0000-0002-7572-7963
WOS: 000472079200009
WOS: 000472079200009
Anahtar Kelimeler
Kaynak
Journal Of Materials Science-Materials In Electronics
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
30
Sayı
12
