Electrical and photocurrent characteristics of Au/PVA (Co-doped)/n-Si photoconductive diodes

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dc.contributor.authorGökçen, Muharrem
dc.contributor.authorTunç, Tuncay
dc.contributor.authorAltındal, Şemsettin
dc.contributor.authorUslu, İbrahim
dc.date.accessioned2020-05-01T09:12:11Z
dc.date.available2020-05-01T09:12:11Z
dc.date.issued2012
dc.departmentDÜ, Fen-Edebiyat Fakültesi, Fizik Bölümüen_US
dc.descriptionGokcen, Muharrem/0000-0001-9063-3028; Tunc, Tuncay/0000-0002-3576-2633; Fen Bilgisi Egitimi, Aksaray Egitim/0000-0001-8976-571Xen_US
dc.descriptionWOS: 000303084100004en_US
dc.description.abstractIn this work, we investigate the some main electrical and photocurrent properties of the Au/PVA(Co-doped)/n-Si diodes by using current-voltage (I-V) measurements at dark and various illumination intensity. Two types of diodes with and without polyvinyl alcohol (PVA) (Co-doped) polymeric interfacial layer were fabricated and measured at room temperature. Results show that the polymeric interfacial layers and series resistance (R-s) strongly affect the main electrical parameters of these structures. Also, metal/polymer/semiconductor (MPS) diode with PVA (Co-doped) interfacial organic layer is very sensitive to the light such that the current in reverse bias region increase by 10(3)-10(4) times with the increasing illumination intensity. The open circuit voltage V-oc and short-circuit current I-sc values of this MPS diode under 100 mW/cm(2) illumination intensity were found as 0.28 V and 19.3 mu A, respectively. (C) 2012 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipDuzce UniversityDuzce University [2010.05.02.056]en_US
dc.description.sponsorshipThis work is supported by Duzce University Scientific Research Project (project no.2010.05.02.056).en_US
dc.identifier.doi10.1016/j.mseb.2012.01.004en_US
dc.identifier.endpage420en_US
dc.identifier.issn0921-5107
dc.identifier.issn1873-4944
dc.identifier.issue5en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage416en_US
dc.identifier.urihttps://doi.org/10.1016/j.mseb.2012.01.004
dc.identifier.urihttps://hdl.handle.net/20.500.12684/5904
dc.identifier.volume177en_US
dc.identifier.wosWOS:000303084100004en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofMaterials Science And Engineering B-Advanced Functional Solid-State Materialsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectPhotoconductive diodesen_US
dc.subjectCo doped PVAen_US
dc.subjectMetal-polymer-semiconductor (MPS)en_US
dc.subjectSeries resistance effecten_US
dc.titleElectrical and photocurrent characteristics of Au/PVA (Co-doped)/n-Si photoconductive diodesen_US
dc.typeArticleen_US

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