Electrical and photocurrent characteristics of Au/PVA (Co-doped)/n-Si photoconductive diodes
Yükleniyor...
Dosyalar
Tarih
2012
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In this work, we investigate the some main electrical and photocurrent properties of the Au/PVA(Co-doped)/n-Si diodes by using current-voltage (I-V) measurements at dark and various illumination intensity. Two types of diodes with and without polyvinyl alcohol (PVA) (Co-doped) polymeric interfacial layer were fabricated and measured at room temperature. Results show that the polymeric interfacial layers and series resistance (R-s) strongly affect the main electrical parameters of these structures. Also, metal/polymer/semiconductor (MPS) diode with PVA (Co-doped) interfacial organic layer is very sensitive to the light such that the current in reverse bias region increase by 10(3)-10(4) times with the increasing illumination intensity. The open circuit voltage V-oc and short-circuit current I-sc values of this MPS diode under 100 mW/cm(2) illumination intensity were found as 0.28 V and 19.3 mu A, respectively. (C) 2012 Elsevier B.V. All rights reserved.
Açıklama
Gokcen, Muharrem/0000-0001-9063-3028; Tunc, Tuncay/0000-0002-3576-2633; Fen Bilgisi Egitimi, Aksaray Egitim/0000-0001-8976-571X
WOS: 000303084100004
WOS: 000303084100004
Anahtar Kelimeler
Photoconductive diodes, Co doped PVA, Metal-polymer-semiconductor (MPS), Series resistance effect
Kaynak
Materials Science And Engineering B-Advanced Functional Solid-State Materials
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
177
Sayı
5
