Electrical and Dielectric Properties of a n-Si Schottky Barrier Diode with Bismuth Titanate Interlayer: Effect of Temperature

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dc.contributor.authorYıldırım, Mert
dc.contributor.authorŞahin, C.
dc.contributor.authorAltındal, Şemsettin
dc.contributor.authorDurmuş, Perihan
dc.date.accessioned2020-05-01T09:12:11Z
dc.date.available2020-05-01T09:12:11Z
dc.date.issued2017
dc.departmentDÜ, Mühendislik Fakültesi, Mekatronik Mühendisliği Bölümüen_US
dc.descriptionYILDIRIM, Mert/0000-0002-8526-1802en_US
dc.descriptionWOS: 000394212600056en_US
dc.description.abstractAn Au/Bi4Ti3O12/n-Si Schottky barrier diode (SBD) was fabricated with a 51 nm Bi4Ti3O12 interfacial layer. Admittance measurements of the fabricated SBD were carried out in the bias voltage (V) range of -4 V and 6 V. Capacitance (C) and conductance (G/omega) measurements were carried out in a wide temperature range of 120-380 K so that temperature effects on electrical and dielectric properties of the SBD were investigated. Main electrical parameters were extracted from reverse bias C (-2)-V plots. It was found that variance of electrical and dielectric parameters of the SBD with temperature is basically different for low and high temperature regions. A fair number (similar to 10(12) eV(-1) cm(-2)) was obtained for surface states (N (ss)); however, N (ss) first decreased then increased with temperature. This result was associated with increased defects with temperature and higher activation energy in the high temperature region. Dielectric parameters of the SBD were also extracted and the dielectric constant of SBD was found as similar to 10 at room temperature. Application of modulus formalism to the admittance data revealed temperature-activated dielectric relaxation at 340 K. Results showed that the temperature has considerable effects on electrical and dielectric properties of Au/Bi4Ti3O12/n-Si SBD.en_US
dc.identifier.doi10.1007/s11664-016-5255-1en_US
dc.identifier.endpage1901en_US
dc.identifier.issn0361-5235
dc.identifier.issn1543-186X
dc.identifier.issue3en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage1895en_US
dc.identifier.urihttps://doi.org/10.1007/s11664-016-5255-1
dc.identifier.urihttps://hdl.handle.net/20.500.12684/5902
dc.identifier.volume46en_US
dc.identifier.wosWOS:000394212600056en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal Of Electronic Materialsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMFS Schottky barrier diodesen_US
dc.subjectbismuth titanateen_US
dc.subjectelectrical and dielectric propertiesen_US
dc.subjecttemperature effecten_US
dc.titleElectrical and Dielectric Properties of a n-Si Schottky Barrier Diode with Bismuth Titanate Interlayer: Effect of Temperatureen_US
dc.typeArticleen_US

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