Electrical and Dielectric Properties of a n-Si Schottky Barrier Diode with Bismuth Titanate Interlayer: Effect of Temperature
Yükleniyor...
Dosyalar
Tarih
2017
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
An Au/Bi4Ti3O12/n-Si Schottky barrier diode (SBD) was fabricated with a 51 nm Bi4Ti3O12 interfacial layer. Admittance measurements of the fabricated SBD were carried out in the bias voltage (V) range of -4 V and 6 V. Capacitance (C) and conductance (G/omega) measurements were carried out in a wide temperature range of 120-380 K so that temperature effects on electrical and dielectric properties of the SBD were investigated. Main electrical parameters were extracted from reverse bias C (-2)-V plots. It was found that variance of electrical and dielectric parameters of the SBD with temperature is basically different for low and high temperature regions. A fair number (similar to 10(12) eV(-1) cm(-2)) was obtained for surface states (N (ss)); however, N (ss) first decreased then increased with temperature. This result was associated with increased defects with temperature and higher activation energy in the high temperature region. Dielectric parameters of the SBD were also extracted and the dielectric constant of SBD was found as similar to 10 at room temperature. Application of modulus formalism to the admittance data revealed temperature-activated dielectric relaxation at 340 K. Results showed that the temperature has considerable effects on electrical and dielectric properties of Au/Bi4Ti3O12/n-Si SBD.
Açıklama
YILDIRIM, Mert/0000-0002-8526-1802
WOS: 000394212600056
WOS: 000394212600056
Anahtar Kelimeler
MFS Schottky barrier diodes, bismuth titanate, electrical and dielectric properties, temperature effect
Kaynak
Journal Of Electronic Materials
WoS Q Değeri
Q3
Scopus Q Değeri
Q3
Cilt
46
Sayı
3
