The effect of PVA (Bi2O3-doped) interfacial layer and series resistance on electrical characteristics of Au/n-Si (110) Schottky barrier diodes (SBDs)

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dc.contributor.authorGökçen, Muharrem
dc.contributor.authorTunç, Tuncay
dc.contributor.authorAltındal, Şemsettin
dc.contributor.authorUslu, İbrahim
dc.date.accessioned2020-04-30T23:33:07Z
dc.date.available2020-04-30T23:33:07Z
dc.date.issued2012
dc.departmentDÜ, Fen-Edebiyat Fakültesi, Fizik Bölümüen_US
dc.descriptionTunc, Tuncay/0000-0002-3576-2633; Gokcen, Muharrem/0000-0001-9063-3028; Fen Bilgisi Egitimi, Aksaray Egitim/0000-0001-8976-571X;en_US
dc.descriptionWOS: 000297003600031en_US
dc.description.abstractTwo types of Schottky Barrier Diodes (SBDs) with and without PVA (Bi2O3-doped) polymeric interfacial layer, were fabricated and measured at room temperature in order to investigate the effects of the PVA (Bi2O3-doped) interfacial layer on the main electrical parameters such as the ideality factor (n), zero-bias barrier height (Phi(B0)), series resistance (R-s) and interface-state density (N-ss). Electrical parameters of these two diodes were calculated from the current-voltage (I-V) characteristics and compared with each other. The values of Phi(B0), n and R-s for SBDs without polymeric interfacial layer are 0.71 eV, 1.44 and 4775 Omega, respectively. The values of Phi(B0), n and R-s for SBDs with PVA (Bi2O3-doped) polymeric interfacial layer are 0.74 eV, 3.49 and 10,030 Omega, respectively. For two SBDs, the energy density distribution profiles of interface states (N-ss) were obtained from forward-bias I-V measurements by taking the bias dependence of R-s of these devices into account. The values of N-ss obtained for the SBD with PVA (Bi2O3-doped) polymeric interfacial layer are smaller than those of the SBD without polymeric interfacial layer. (C) 2011 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipDuzce UniversityDuzce University [2010.05.02.056]en_US
dc.description.sponsorshipThis work is supported by Duzce University Scientific Research Project (project no. 2010.05.02.056).en_US
dc.identifier.doi10.1016/j.cap.2011.08.012en_US
dc.identifier.endpage530en_US
dc.identifier.issn1567-1739
dc.identifier.issn1878-1675
dc.identifier.issue2en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage525en_US
dc.identifier.urihttps://doi.org/10.1016/j.cap.2011.08.012
dc.identifier.urihttps://hdl.handle.net/20.500.12684/4899
dc.identifier.volume12en_US
dc.identifier.wosWOS:000297003600031en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofCurrent Applied Physicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectBi2O3-doped PVAen_US
dc.subjectMetal-polymer-semiconductor (MPS)en_US
dc.subjectSeries resistance effecten_US
dc.subjectI-V characteristicsen_US
dc.titleThe effect of PVA (Bi2O3-doped) interfacial layer and series resistance on electrical characteristics of Au/n-Si (110) Schottky barrier diodes (SBDs)en_US
dc.typeArticleen_US

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