The effect of PVA (Bi2O3-doped) interfacial layer and series resistance on electrical characteristics of Au/n-Si (110) Schottky barrier diodes (SBDs)
Yükleniyor...
Dosyalar
Tarih
2012
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Two types of Schottky Barrier Diodes (SBDs) with and without PVA (Bi2O3-doped) polymeric interfacial layer, were fabricated and measured at room temperature in order to investigate the effects of the PVA (Bi2O3-doped) interfacial layer on the main electrical parameters such as the ideality factor (n), zero-bias barrier height (Phi(B0)), series resistance (R-s) and interface-state density (N-ss). Electrical parameters of these two diodes were calculated from the current-voltage (I-V) characteristics and compared with each other. The values of Phi(B0), n and R-s for SBDs without polymeric interfacial layer are 0.71 eV, 1.44 and 4775 Omega, respectively. The values of Phi(B0), n and R-s for SBDs with PVA (Bi2O3-doped) polymeric interfacial layer are 0.74 eV, 3.49 and 10,030 Omega, respectively. For two SBDs, the energy density distribution profiles of interface states (N-ss) were obtained from forward-bias I-V measurements by taking the bias dependence of R-s of these devices into account. The values of N-ss obtained for the SBD with PVA (Bi2O3-doped) polymeric interfacial layer are smaller than those of the SBD without polymeric interfacial layer. (C) 2011 Elsevier B.V. All rights reserved.
Açıklama
Tunc, Tuncay/0000-0002-3576-2633; Gokcen, Muharrem/0000-0001-9063-3028; Fen Bilgisi Egitimi, Aksaray Egitim/0000-0001-8976-571X;
WOS: 000297003600031
WOS: 000297003600031
Anahtar Kelimeler
Bi2O3-doped PVA, Metal-polymer-semiconductor (MPS), Series resistance effect, I-V characteristics
Kaynak
Current Applied Physics
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
12
Sayı
2
