Investigation of frequency-dependent dielectric properties of ZnO nanorods grown on Si wafer: In/ZnO/p-Si heterostructure

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dc.authoridGökçen, Muharrem/0000-0001-9063-3028
dc.authorid, cevher/0000-0003-4740-1138
dc.authoriddogruer, musa/0000-0002-4214-9159
dc.authorwosiddoğruer, musa/GPW-6970-2022
dc.authorwosidGökçen, Muharrem/A-1235-2016
dc.authorwosid, cevher/HJP-4408-2023
dc.contributor.authorAl-Khafaji, A.
dc.contributor.authorSoylu-Koç, N.
dc.contributor.authorAltıntaş, Sevgi Polat
dc.contributor.authorDoğruer, Musa
dc.contributor.authorAltuğ, Cevher
dc.contributor.authorGökçen, Muharrem
dc.contributor.authorVarilci, Ahmet
dc.date.accessioned2023-07-26T11:51:04Z
dc.date.available2023-07-26T11:51:04Z
dc.date.issued2022
dc.departmentDÜ, Fen-Edebiyat Fakültesi, Fizik Bölümüen_US
dc.description.abstractWe report the result of an in-depth study of growth, structural properties and frequency-dependent dielectric function of ZnO nanorods (NRs) grown on p-Si as well as the In/ZnO/p-Si heterostructures. The NRs were produced by hydrothermal method on the Si substrate in a Teflon-lined stainless-steel cover at 90 degrees C. Scanning electron microscopy analysis indicates nanorod morphology while LeBail refinement of XRD data showed that the ZnO NRs crystallize in hexagonal wurtzile structure with (002) orientation (space group P6(3)mc). The dielectric properties of the In/ZnO/p-Si heterostructure were calculated with the help of experimental admittance measurements performed in the +/- 5 V voltage range and 1 kHz/1 MHz frequency range under ambient conditions. The real part of the complex relative permittivity (epsilon '), the imaginary part of complex relative permittivity (epsilon '') and loss tangent (tan delta) were obtained. Also, real (M ') and imaginary (M '') parts of the complex electric modulus (M*) were extracted. Frequency dependence in the epsilon ', epsilon '' and tan delta was attributed to the frequency dependence of the space charge polarization. The real part of electrical modulus was found to be nearly independent of frequency and voltage for positive voltages.en_US
dc.identifier.doi10.1007/s10854-022-07976-6
dc.identifier.endpage8255en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue10en_US
dc.identifier.scopus2-s2.0-85125703010en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage8247en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-022-07976-6
dc.identifier.urihttps://hdl.handle.net/20.500.12684/12488
dc.identifier.volume33en_US
dc.identifier.wosWOS:000765736100006en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorGökçen, Muharrem
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Materials Science-Materials In Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.snmz$2023V1Guncelleme$en_US
dc.subjectElectrical-Properties; Thin-Films; Performance; Modulus; Itoen_US
dc.titleInvestigation of frequency-dependent dielectric properties of ZnO nanorods grown on Si wafer: In/ZnO/p-Si heterostructureen_US
dc.typeArticleen_US

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