Investigation of frequency-dependent dielectric properties of ZnO nanorods grown on Si wafer: In/ZnO/p-Si heterostructure
Yükleniyor...
Dosyalar
Tarih
2022
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
We report the result of an in-depth study of growth, structural properties and frequency-dependent dielectric function of ZnO nanorods (NRs) grown on p-Si as well as the In/ZnO/p-Si heterostructures. The NRs were produced by hydrothermal method on the Si substrate in a Teflon-lined stainless-steel cover at 90 degrees C. Scanning electron microscopy analysis indicates nanorod morphology while LeBail refinement of XRD data showed that the ZnO NRs crystallize in hexagonal wurtzile structure with (002) orientation (space group P6(3)mc). The dielectric properties of the In/ZnO/p-Si heterostructure were calculated with the help of experimental admittance measurements performed in the +/- 5 V voltage range and 1 kHz/1 MHz frequency range under ambient conditions. The real part of the complex relative permittivity (epsilon '), the imaginary part of complex relative permittivity (epsilon '') and loss tangent (tan delta) were obtained. Also, real (M ') and imaginary (M '') parts of the complex electric modulus (M*) were extracted. Frequency dependence in the epsilon ', epsilon '' and tan delta was attributed to the frequency dependence of the space charge polarization. The real part of electrical modulus was found to be nearly independent of frequency and voltage for positive voltages.
Açıklama
Anahtar Kelimeler
Electrical-Properties; Thin-Films; Performance; Modulus; Ito
Kaynak
Journal of Materials Science-Materials In Electronics
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
33
Sayı
10
