Investigation of Electrical Characteristics in Al/CdS-PVA/p-Si (MPS) Structures Using Impedance Spectroscopy Method

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dc.contributor.authorDemir, Gülçin Ersöz
dc.contributor.authorYücedağ, İbrahim
dc.contributor.authorKalandaragh, Yashar Azizian
dc.contributor.authorOrak, İkram
dc.contributor.authorAltındal, Şemsettin
dc.date.accessioned2020-04-30T23:18:37Z
dc.date.available2020-04-30T23:18:37Z
dc.date.issued2016
dc.departmentDÜ, Teknoloji Fakültesi, Bilgisayar Mühendisliği Bölümüen_US
dc.descriptionWOS: 000378607100048en_US
dc.description.abstractThe cadmium sulfide (CdS) nanopowders have been prepared by ball-milling method, and CdS-polyvinyl alcohol (PVA) nanocompound in the form of film has been deposited on a p-Si wafer as an interfacial layer by spin-coating method. The impedance characteristics of the fabricated Al/CdS-PVA/p-Si (metal-polymer-semiconductor)-type structures were studied in the frequency and voltage range of 5 kHz-5 MHz and +/-1 V, respectively, by considering interface states (D-it), series resistance (R-s), and interfacial layer effects at 300 K. While the voltage and frequency dependence profiles of D-it were evaluated from the low-high frequency capacitance (C-LF-C-HF) and Hill-Coleman methods, R-s profiles were evaluated from the Nicollian and Brews method. Doping concentration atoms (N-A) and barrier height [Phi (B)(capacitance-voltage (C-V))] values were also obtained from the reverse bias C-2 versus V plots for each frequency. While D-it and R-s values decrease with increasing frequency almost exponentially, Phi (B)(C-V) increases linearly. Therefore, both the measured capacitance (C-m) and conductance (G(m)/omega) values were corrected to eliminate the R-s effect. The experimental results show that R-s value is more effective on the impedance measurements at high frequencies in the accumulation region, but D-it is effective at low frequencies in the depletion region.en_US
dc.identifier.doi10.1109/TED.2016.2566813en_US
dc.identifier.endpage2955en_US
dc.identifier.issn0018-9383
dc.identifier.issn1557-9646
dc.identifier.issue7en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage2948en_US
dc.identifier.urihttps://doi.org/10.1109/TED.2016.2566813
dc.identifier.urihttps://hdl.handle.net/20.500.12684/3439
dc.identifier.volume63en_US
dc.identifier.wosWOS:000378607100048en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherIeee-Inst Electrical Electronics Engineers Incen_US
dc.relation.ispartofIeee Transactions On Electron Devicesen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAl/cadmium sulfide (CdS)-polyvinyl alcohol (PVA)/p-Si [metal-polymer-semiconductor (MPS)]-type structuresen_US
dc.subjectelectrical characteristicsen_US
dc.subjectimpedance measurementsen_US
dc.subjectinterface traps (D-it) or surface states (N-ss)en_US
dc.subjectseries resistanceen_US
dc.titleInvestigation of Electrical Characteristics in Al/CdS-PVA/p-Si (MPS) Structures Using Impedance Spectroscopy Methoden_US
dc.typeArticleen_US

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