Investigation of Electrical Characteristics in Al/CdS-PVA/p-Si (MPS) Structures Using Impedance Spectroscopy Method
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Dosyalar
Tarih
2016
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Ieee-Inst Electrical Electronics Engineers Inc
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The cadmium sulfide (CdS) nanopowders have been prepared by ball-milling method, and CdS-polyvinyl alcohol (PVA) nanocompound in the form of film has been deposited on a p-Si wafer as an interfacial layer by spin-coating method. The impedance characteristics of the fabricated Al/CdS-PVA/p-Si (metal-polymer-semiconductor)-type structures were studied in the frequency and voltage range of 5 kHz-5 MHz and +/-1 V, respectively, by considering interface states (D-it), series resistance (R-s), and interfacial layer effects at 300 K. While the voltage and frequency dependence profiles of D-it were evaluated from the low-high frequency capacitance (C-LF-C-HF) and Hill-Coleman methods, R-s profiles were evaluated from the Nicollian and Brews method. Doping concentration atoms (N-A) and barrier height [Phi (B)(capacitance-voltage (C-V))] values were also obtained from the reverse bias C-2 versus V plots for each frequency. While D-it and R-s values decrease with increasing frequency almost exponentially, Phi (B)(C-V) increases linearly. Therefore, both the measured capacitance (C-m) and conductance (G(m)/omega) values were corrected to eliminate the R-s effect. The experimental results show that R-s value is more effective on the impedance measurements at high frequencies in the accumulation region, but D-it is effective at low frequencies in the depletion region.
Açıklama
WOS: 000378607100048
Anahtar Kelimeler
Al/cadmium sulfide (CdS)-polyvinyl alcohol (PVA)/p-Si [metal-polymer-semiconductor (MPS)]-type structures, electrical characteristics, impedance measurements, interface traps (D-it) or surface states (N-ss), series resistance
Kaynak
Ieee Transactions On Electron Devices
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
63
Sayı
7
