Controlling the electrical characteristics of Au/n-Si structures by interfacial insulator layer

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dc.contributor.authorYıldırım, Mert
dc.contributor.authorGökçen, Muharrem
dc.date.accessioned2020-04-30T22:41:42Z
dc.date.available2020-04-30T22:41:42Z
dc.date.issued2012
dc.departmentDÜ, Fen-Edebiyat Fakültesi, Fizik Bölümüen_US
dc.descriptionYILDIRIM, Mert/0000-0002-8526-1802; Gokcen, Muharrem/0000-0001-9063-3028en_US
dc.descriptionWOS: 000306777600012en_US
dc.description.abstractAdmittance (C-V and G/omega-V) measurements of Au/n-Si (metal-semiconductor, MS) and Au/SnO2/n-Si (metal-insulator-semiconductor, MIS) structures were carried out between 1 kHz and 1 MHz at room temperature to investigate the interfacial insulator layer effect on the electrical characteristics of Au/n-Si structures. Experimental results showed that MIS structure's capacitance (C) values, unlike those of MS structure, became stable especially at high frequencies in the accumulation region. Also, the insulator layer caused structure's shunt resistance (R-sh) to increase. It was found that series resistance (R-s) is more effective in the accumulation region at high frequencies after the correction was applied to C and G/omega) data to eliminate the R-s effect. The density of interface states (D-is) was obtained using Hill-Coleman method, D-is values MIS structure was obtained smaller than those of MS structure. Results indicate that interfacial insulator layer brings about some improvements in electrical characteristics of Au/n-Si structures. (C) 2012 Elsevier Ltd. All rights reserved.en_US
dc.description.sponsorshipDuzce University Scientific Research ProjectDuzce University [2010.05.02.056]en_US
dc.description.sponsorshipThis work is supported by the Duzce University Scientific Research Project no. 2010.05.02.056.en_US
dc.identifier.doi10.1016/j.mssp.2012.02.005en_US
dc.identifier.endpage411en_US
dc.identifier.issn1369-8001
dc.identifier.issue4en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage406en_US
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2012.02.005
dc.identifier.urihttps://hdl.handle.net/20.500.12684/3235
dc.identifier.volume15en_US
dc.identifier.wosWOS:000306777600012en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Sci Ltden_US
dc.relation.ispartofMaterials Science In Semiconductor Processingen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMS and MIS structuresen_US
dc.subjectInterfacial insulator layer effecten_US
dc.subjectSeries resistance effecten_US
dc.subjectFrequency dependenceen_US
dc.titleControlling the electrical characteristics of Au/n-Si structures by interfacial insulator layeren_US
dc.typeArticleen_US

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