Controlling the electrical characteristics of Au/n-Si structures by interfacial insulator layer
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Date
2012
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier Sci Ltd
Access Rights
info:eu-repo/semantics/closedAccess
Abstract
Admittance (C-V and G/omega-V) measurements of Au/n-Si (metal-semiconductor, MS) and Au/SnO2/n-Si (metal-insulator-semiconductor, MIS) structures were carried out between 1 kHz and 1 MHz at room temperature to investigate the interfacial insulator layer effect on the electrical characteristics of Au/n-Si structures. Experimental results showed that MIS structure's capacitance (C) values, unlike those of MS structure, became stable especially at high frequencies in the accumulation region. Also, the insulator layer caused structure's shunt resistance (R-sh) to increase. It was found that series resistance (R-s) is more effective in the accumulation region at high frequencies after the correction was applied to C and G/omega) data to eliminate the R-s effect. The density of interface states (D-is) was obtained using Hill-Coleman method, D-is values MIS structure was obtained smaller than those of MS structure. Results indicate that interfacial insulator layer brings about some improvements in electrical characteristics of Au/n-Si structures. (C) 2012 Elsevier Ltd. All rights reserved.
Description
YILDIRIM, Mert/0000-0002-8526-1802; Gokcen, Muharrem/0000-0001-9063-3028
WOS: 000306777600012
WOS: 000306777600012
Keywords
MS and MIS structures, Interfacial insulator layer effect, Series resistance effect, Frequency dependence
Journal or Series
Materials Science In Semiconductor Processing
WoS Q Value
Q2
Scopus Q Value
Q1
Volume
15
Issue
4
