Controlling the electrical characteristics of Au/n-Si structure with and without (biphenyl-CoPc) and (OHSubs-ZnPc) interfacial layers at room temperature

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dc.contributor.authorBaraz, Nalan
dc.contributor.authorYücedağ, İbrahim
dc.contributor.authorDemir, Ahmet
dc.contributor.authorDemir, Gülçin Ersöz
dc.contributor.authorAltındal, Şemsettin
dc.contributor.authorKandaz, Mehmet
dc.date.accessioned2020-04-30T22:41:42Z
dc.date.available2020-04-30T22:41:42Z
dc.date.issued2017
dc.departmentDÜ, Orman Fakültesi, Peyzaj Mimarlığı Bölümüen_US
dc.descriptionWOS: 000404978200005en_US
dc.description.abstractIn order to interpret well whether or not the organic or polymer interfacial layer is effective on performance of the conventional Au/n-Si (metal semiconductor [MS]) type Schottky barrier diodes (SBDs), in respect to ideality factor (n), leakage current, rectifying rate (RR), series and shunt resistances (R-s, R-sh) and surface states (N-ss) at room temperature, both Au/biphenyl-CoPc/n-Si (MPS1) and Au/OHSubs-ZnPc/n-Si (MPS2) type SBDs were fabricated. The electrical characteristics of these devices have been investigated and compared by using forward and reverse bias current-voltage (I-V) characteristics in the voltage range of (-4V)-(4V) for with and without (biphenyl-CoPc) and (OHSubs-ZnPc) interfacial layers at room temperature. The main electrical parameters of these diodes such as reverse saturation current (I-0), ideality factor (n), zero-bias barrier height (phi(B0)), RR, R-s and R-sh were found as 1.14x10(-5)A, 5.8, 0.6eV, 362, 44 and 15.9k for reference sample (MS), 7.05x10(-10)A, 3.8, 0.84eV, 2360, 115 and 270k for MPS1 and 2.16x10(-7)A, 4.8, 0.7eV, 3903, 62 and 242k for MPS2, respectively. It is clear that all of these parameters considerably change by using an organic interfacial layer. The energy density distribution profile of N-ss was found for each sample by taking into account the voltage dependence of effective barrier height (phi(e)) and ideality factor, and they were compared. Experimental results confirmed that the use of biphenyl-CoPc and OHSubs-ZnPc interfacial layer has led to an important increase in the performance of the conventional of MS type SBD. Copyright (c) 2015 John Wiley & Sons, Ltd.en_US
dc.identifier.doi10.1002/pat.3717en_US
dc.identifier.endpage957en_US
dc.identifier.issn1042-7147
dc.identifier.issn1099-1581
dc.identifier.issue8en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage952en_US
dc.identifier.urihttps://doi.org/10.1002/pat.3717
dc.identifier.urihttps://hdl.handle.net/20.500.12684/3234
dc.identifier.volume28en_US
dc.identifier.wosWOS:000404978200005en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherWileyen_US
dc.relation.ispartofPolymers For Advanced Technologiesen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAuen_US
dc.subjectn-Si structure with and without (biphenyl-CoPc) and (OHSubs-ZnPc) interfacial layersen_US
dc.subjectI-V characteristicsen_US
dc.subjectcurrent-conduction mechanismsen_US
dc.subjectrectifying rateen_US
dc.subjectseries and shunt resistancesen_US
dc.subjectsurface statesen_US
dc.titleControlling the electrical characteristics of Au/n-Si structure with and without (biphenyl-CoPc) and (OHSubs-ZnPc) interfacial layers at room temperatureen_US
dc.typeArticleen_US

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