Distribution of interface traps in Au/2% GC-doped Ca3Co4Ga0.001Ox/n-Si structures

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dc.authoridYILDIRIM, Mert/0000-0002-8526-1802
dc.authorwosidYILDIRIM, Mert/B-8002-2015
dc.contributor.authorEroglu, Ayse Gul
dc.contributor.authorYildirim, Mert
dc.contributor.authorDurmus, Perihan
dc.contributor.authorDokme, Ibilge
dc.date.accessioned2021-12-01T18:48:01Z
dc.date.available2021-12-01T18:48:01Z
dc.date.issued2020
dc.department[Belirlenecek]en_US
dc.description.abstractThis study presents voltage-dependent profile of interface traps in Au/n-Si structure with 2% graphene-cobalt-doped Ca3Co4Ga0.001Ox interfacial layer. Admittance measurements revealed capacitance-voltage (C-V) plots with typical regions of a metal-insulator-semiconductor structure through inversion, depletion, and accumulation regions. Frequency dispersion is observed in C-V plots and such behavior was explained with excess capacitance, which is associated with the density of interface traps (D-it) in the structure because larger D-it is observed when the measurements are held at low frequencies due to the fact that traps can follow the signal depending on their lifetime. D-it was also obtained using conductance method, which also provided lifetime of the traps. The difference between the values of D-it was attributed to the difference in extraction methods. Obtained results showed that Au/2% graphene-cobalt-doped Ca3Co4Ga0.001Ox/n-Si structure yields promising electrical characteristics when the structure is operated at high frequencies. (c) 2019 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2019, 136, 48399.en_US
dc.description.sponsorshipGazi University Scientific Research ProjectGazi University [GU-BAP.05/2018-09]en_US
dc.description.sponsorshipThis study was supported by Gazi University Scientific Research Project (Project Number: GU-BAP.05/2018-09).en_US
dc.identifier.doi10.1002/app.48399
dc.identifier.issn0021-8995
dc.identifier.issn1097-4628
dc.identifier.issue8en_US
dc.identifier.scopus2-s2.0-85070761155en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1002/app.48399
dc.identifier.urihttps://hdl.handle.net/20.500.12684/10435
dc.identifier.volume137en_US
dc.identifier.wosWOS:000481380100001en_US
dc.identifier.wosqualityQ2
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherWileyen_US
dc.relation.ispartofJournal Of Applied Polymer Scienceen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectdensity of interface trapsen_US
dc.subjectdepletion capacitanceen_US
dc.subjectgrapheneen_US
dc.subjectparallel conductanceen_US
dc.subjectAdmittance Characteristicsen_US
dc.subjectElectrical-Propertiesen_US
dc.subjectVoltage-Dependenceen_US
dc.subjectFrequencyen_US
dc.subjectDiodesen_US
dc.titleDistribution of interface traps in Au/2% GC-doped Ca3Co4Ga0.001Ox/n-Si structuresen_US
dc.typeArticleen_US

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