Distribution of interface traps in Au/2% GC-doped Ca3Co4Ga0.001Ox/n-Si structures
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Dosyalar
Tarih
2020
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Wiley
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
This study presents voltage-dependent profile of interface traps in Au/n-Si structure with 2% graphene-cobalt-doped Ca3Co4Ga0.001Ox interfacial layer. Admittance measurements revealed capacitance-voltage (C-V) plots with typical regions of a metal-insulator-semiconductor structure through inversion, depletion, and accumulation regions. Frequency dispersion is observed in C-V plots and such behavior was explained with excess capacitance, which is associated with the density of interface traps (D-it) in the structure because larger D-it is observed when the measurements are held at low frequencies due to the fact that traps can follow the signal depending on their lifetime. D-it was also obtained using conductance method, which also provided lifetime of the traps. The difference between the values of D-it was attributed to the difference in extraction methods. Obtained results showed that Au/2% graphene-cobalt-doped Ca3Co4Ga0.001Ox/n-Si structure yields promising electrical characteristics when the structure is operated at high frequencies. (c) 2019 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2019, 136, 48399.
Açıklama
Anahtar Kelimeler
density of interface traps, depletion capacitance, graphene, parallel conductance, Admittance Characteristics, Electrical-Properties, Voltage-Dependence, Frequency, Diodes
Kaynak
Journal Of Applied Polymer Science
WoS Q Değeri
Q2
Q2
Q2
Scopus Q Değeri
Q2
Cilt
137
Sayı
8
