Distribution of interface traps in Au/2% GC-doped Ca3Co4Ga0.001Ox/n-Si structures

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Tarih

2020

Dergi Başlığı

Dergi ISSN

Cilt Başlığı

Yayıncı

Wiley

Erişim Hakkı

info:eu-repo/semantics/closedAccess

Özet

This study presents voltage-dependent profile of interface traps in Au/n-Si structure with 2% graphene-cobalt-doped Ca3Co4Ga0.001Ox interfacial layer. Admittance measurements revealed capacitance-voltage (C-V) plots with typical regions of a metal-insulator-semiconductor structure through inversion, depletion, and accumulation regions. Frequency dispersion is observed in C-V plots and such behavior was explained with excess capacitance, which is associated with the density of interface traps (D-it) in the structure because larger D-it is observed when the measurements are held at low frequencies due to the fact that traps can follow the signal depending on their lifetime. D-it was also obtained using conductance method, which also provided lifetime of the traps. The difference between the values of D-it was attributed to the difference in extraction methods. Obtained results showed that Au/2% graphene-cobalt-doped Ca3Co4Ga0.001Ox/n-Si structure yields promising electrical characteristics when the structure is operated at high frequencies. (c) 2019 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2019, 136, 48399.

Açıklama

Anahtar Kelimeler

density of interface traps, depletion capacitance, graphene, parallel conductance, Admittance Characteristics, Electrical-Properties, Voltage-Dependence, Frequency, Diodes

Kaynak

Journal Of Applied Polymer Science

WoS Q Değeri

Q2
Q2

Scopus Q Değeri

Q2

Cilt

137

Sayı

8

Künye