Effects of glass substrate coated by different-content buffer layer on the quality of poly-Si thin films

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dc.contributor.authorKaraman, Mehmet
dc.contributor.authorÖzmen, Özge Tüzün
dc.contributor.authorSedani, Salar Habibpur
dc.contributor.authorÖzkol, Engin
dc.contributor.authorTuran, Raşit
dc.date.accessioned2020-05-01T09:11:57Z
dc.date.available2020-05-01T09:11:57Z
dc.date.issued2016
dc.departmentDÜ, Fen-Edebiyat Fakültesi, Fizik Bölümüen_US
dc.descriptionWOS: 000389199800009en_US
dc.description.abstractIn this work, polycrystalline silicon (poly-Si) thin films were fabricated by aluminum induced crystallization (AIC) technique. SiNx, deposited as a function of NH3/SiH4 ratio, and AZO (Al-doped ZnO) films on glass were used as a buffer layer between glass and Si film. The effect of buffer layer content on the crystallinity of poly-Si thin films was studied by Raman analysis which shows that fully crystallization without stress was achieved for all samples. Moreover, the preferred crystalline orientation and crystallite size of films were deduced by X-ray diffraction (XRD) analysis. The preferred orientation is <100> as independent from the buffer layer content while the crystallite sizes increase up to 48.5 nm by increasing the amount of SiH4. The electrical properties of the films were carried out by four point probe and currentvoltage (I-V) analysis. Both techniques demonstrated that the resistivity of the SiNx-based samples is around 0.1Ocm. The grain size analysis was accomplished by electron back scattering diffraction (EBSD) measurements. The grain size up to 25 mu m was achieved as observed from EBSD images. The results show that the fabrication parameters of SiNx and AZO buffer layers have the great effects on the crystallography of poly-Si films. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheimen_US
dc.description.sponsorshipTUBITAKTurkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) [112T084]; Duzce UniversityDuzce University [2016.05.02.412]en_US
dc.description.sponsorshipThis work was funded by TUBITAK under the project number 112T084 and Scientific Research Project Fund of Duzce University under the project number 2016.05.02.412. The authors would like to thank Sedat Canli for his valuable contributions.en_US
dc.identifier.doi10.1002/pssa.201600197en_US
dc.identifier.endpage3149en_US
dc.identifier.issn1862-6300
dc.identifier.issn1862-6319
dc.identifier.issue12en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage3142en_US
dc.identifier.urihttps://doi.org/10.1002/pssa.201600197
dc.identifier.urihttps://hdl.handle.net/20.500.12684/5827
dc.identifier.volume213en_US
dc.identifier.wosWOS:000389199800009en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherWiley-V C H Verlag Gmbhen_US
dc.relation.ispartofPhysica Status Solidi A-Applications And Materials Scienceen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectaluminium induced crystallizationen_US
dc.subjectAZO layeren_US
dc.subjecteffect of buffer layeren_US
dc.subjectglass substrateen_US
dc.subjectSiNx layeren_US
dc.titleEffects of glass substrate coated by different-content buffer layer on the quality of poly-Si thin filmsen_US
dc.typeArticleen_US

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