Effects of glass substrate coated by different-content buffer layer on the quality of poly-Si thin films
Yükleniyor...
Dosyalar
Tarih
2016
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Wiley-V C H Verlag Gmbh
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In this work, polycrystalline silicon (poly-Si) thin films were fabricated by aluminum induced crystallization (AIC) technique. SiNx, deposited as a function of NH3/SiH4 ratio, and AZO (Al-doped ZnO) films on glass were used as a buffer layer between glass and Si film. The effect of buffer layer content on the crystallinity of poly-Si thin films was studied by Raman analysis which shows that fully crystallization without stress was achieved for all samples. Moreover, the preferred crystalline orientation and crystallite size of films were deduced by X-ray diffraction (XRD) analysis. The preferred orientation is <100> as independent from the buffer layer content while the crystallite sizes increase up to 48.5 nm by increasing the amount of SiH4. The electrical properties of the films were carried out by four point probe and currentvoltage (I-V) analysis. Both techniques demonstrated that the resistivity of the SiNx-based samples is around 0.1Ocm. The grain size analysis was accomplished by electron back scattering diffraction (EBSD) measurements. The grain size up to 25 mu m was achieved as observed from EBSD images. The results show that the fabrication parameters of SiNx and AZO buffer layers have the great effects on the crystallography of poly-Si films. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Açıklama
WOS: 000389199800009
Anahtar Kelimeler
aluminium induced crystallization, AZO layer, effect of buffer layer, glass substrate, SiNx layer
Kaynak
Physica Status Solidi A-Applications And Materials Science
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
213
Sayı
12
