A Comparative Study on the Main Electrical Parameters of Au/n-Si, Au/Biphenyl-CuPc/n-Si/ and Au/Biphenylsubs-CoPc/n-Si/ Type Schottky Barrier Diodes

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dc.contributor.authorDemir, Ahmet
dc.contributor.authorYücedağ, İbrahim
dc.contributor.authorErsöz, Gülçin
dc.contributor.authorAltındal, Şemsettin
dc.contributor.authorBaraz, Nalan
dc.contributor.authorKandaz, Mehmet
dc.date.accessioned2020-04-30T22:38:38Z
dc.date.available2020-04-30T22:38:38Z
dc.date.issued2016
dc.departmentDÜ, Fen-Edebiyat Fakültesi, Fizik Bölümüen_US
dc.descriptionWOS: 000386520700012en_US
dc.description.abstractWe have produced Au/n-Si (MS), Au/n-Si/biphenyl-CuPc (MPS1), and Au/n-Si/biphenylSubs-CoPc (MPS2) type Schottky barrier diodes (SBDs) to investigate the effect of interfacial layer on the main electrical parameters. Biphenyl-CuPc and biphenylSubs-CoPc interfacial layers were successfully coated on n-Si substrate by using the spin coating system. The current-voltage (I-V) characteristics of these structures were investigated at room temperature and they were considerably influenced by the interfacial layer. The main electronic parameters of these three type diodes that are reverse saturation current (I-0), series resistance (R-s), ideality factor (n), and zero-bias barrier height (Phi(B0)) were determined from the forward bias I-V characteristic. The energy density distribution profile of the interface states (N-ss) was also obtained from the forward I-V data by taking into account voltage dependent effective barrier height (Phi(theta)) and ideality factor n(V), and increased from the bottom of conductance band to the mid-gap energy of Si almost exponentially. In addition, the voltage dependent profile of resistance was obtained from capacitance-voltage (C-V) and conductance-voltage (G/omega - V) data at high frequency (500 kHz) at room temperature for each diode. Experimental results show that the R-s, N-ss and the interfacial layer are significantly effective on the electrical characteristics.en_US
dc.identifier.doi10.1166/jno.2016.1945en_US
dc.identifier.endpage625en_US
dc.identifier.issn1555-130X
dc.identifier.issn1555-1318
dc.identifier.issue5en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.startpage620en_US
dc.identifier.urihttps://doi.org/10.1166/jno.2016.1945
dc.identifier.urihttps://hdl.handle.net/20.500.12684/2325
dc.identifier.volume11en_US
dc.identifier.wosWOS:000386520700012en_US
dc.identifier.wosqualityQ4en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherAmer Scientific Publishersen_US
dc.relation.ispartofJournal Of Nanoelectronics And Optoelectronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAu/n-Si/Biphenyl-CuPc SBDsen_US
dc.subjectAu/n-Si/Biphenylsubs-CoPc SBDsen_US
dc.subjectPhthalocyanine (Pc)en_US
dc.subjectI-V Characteristicsen_US
dc.subjectSeries Resistanceen_US
dc.subjectSurface Statesen_US
dc.titleA Comparative Study on the Main Electrical Parameters of Au/n-Si, Au/Biphenyl-CuPc/n-Si/ and Au/Biphenylsubs-CoPc/n-Si/ Type Schottky Barrier Diodesen_US
dc.typeArticleen_US

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