Determining electrical and dielectric parameters of Al/ZnS-PVA/p-Si (MPS) structures in wide range of temperature and voltage

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dc.contributor.authorBaraz, Nalan
dc.contributor.authorYücedağ, İbrahim
dc.contributor.authorKalandaragh, Yashar Azizian
dc.contributor.authorAltındal, Şemsettin
dc.date.accessioned2020-05-01T09:11:23Z
dc.date.available2020-05-01T09:11:23Z
dc.date.issued2018
dc.departmentDÜ, Tıp Fakültesi, Cerrahi Tıp Bilimleri Bölümüen_US
dc.descriptionWOS: 000438679000024en_US
dc.description.abstractIn this study zinc sulphide (ZnS) nanostructures have been prepared by microwave-assisted method in presence of polyvinyl alcohol (PVA) as a capping agent. The structural and morphological properties of prepared sample have been investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). These analyses confirm that the sample has nano structure. They have been used this sample to fabrication of Al/ZnS-PVA/p-Si structure. The effect of temperature and voltage on the electrical and dielectric parameters of the Al/ZnS-PVA/p-Si (MPS) structures has been investigated in the wide range of temperature (140-340 K) and voltage (- 2 V to + 4 V) using capacitance/conductance-voltage (C/G-V) measurements at 500 kHz. Experimental measurements revealed that the values of C/G-V increase with increasing temperature but the values of series resistance (R (s) ) increase with decreasing temperature. As well as the dielectric parameters such as the values of real and imaginary parts of the dielectric constants (epsilon' and epsilon aEuro(3)) and electric modules (M' and MaEuro(3)), loss tangent (tan delta), and ac electrical conductivity (sigma (ac) ) were obtained using C and G/omega data. These parameters are found out as strong functions of temperature and voltage. While the values of epsilon', epsilon aEuro(3) and tan delta increase with increasing temperature, the values of sigma (ac) , M' and MaEuro(3) decrease. The Arrhenius plot (ln(sigma(ac)) vs q/kT) shows two distinct linear ranges with different slopes or activation energies (E (a) ) at low (140-230 K) and high (260-340 K) temperatures. Both values of R (s) and (ZnS-PVA) interfacial layers are also very effective parameters on the electric and dielectric properties.en_US
dc.description.sponsorshipGazi University Scientific Research ProjectGazi University [GU-BAP.05/2018-10]en_US
dc.description.sponsorshipThis study was supported by Gazi University Scientific Research Project. (Project Number: GU-BAP.05/2018-10).en_US
dc.identifier.doi10.1007/s10854-018-9391-7en_US
dc.identifier.endpage12743en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue15en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage12735en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-018-9391-7
dc.identifier.urihttps://hdl.handle.net/20.500.12684/5551
dc.identifier.volume29en_US
dc.identifier.wosWOS:000438679000024en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal Of Materials Science-Materials In Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleDetermining electrical and dielectric parameters of Al/ZnS-PVA/p-Si (MPS) structures in wide range of temperature and voltageen_US
dc.typeArticleen_US

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