Temperature and voltage dependences of dielectric properties and ac electrical conductivity in Au/PVC plus TCNQ/p-Si structures

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dc.contributor.authorYücedağ, İbrahim
dc.contributor.authorKaya, Ahmet
dc.contributor.authorTecimer, Hüseyin
dc.contributor.authorAltındal, Şemsettin
dc.date.accessioned2020-04-30T23:32:34Z
dc.date.available2020-04-30T23:32:34Z
dc.date.issued2014
dc.departmentDÜ, Teknoloji Fakültesi, Bilgisayar Mühendisliği Bölümüen_US
dc.descriptionInternational Semiconductor Science and Technology Conference (ISSTC) -- JAN 13-15, 2014 -- Istanbul, TURKEYen_US
dc.description/0000-0002-8211-8736en_US
dc.descriptionWOS: 000345645000007en_US
dc.description.abstractDielectric properties and ac conductivity (sigma(ac)) of Au/PVC+TCNQ/p-Si structures have been investigated in the wide temperature range of 80-420 K using capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements at 1 MlHz. It has been found that the forward bias C-V plots exhibit a distinct peak especially at a high temperature. Effects of the series resistance (R-s), interfacial PVC+TCNQ layer and the density distribution of interfaces'traps (D-it) on the electrical peak and the dielectric properties were investigated in detail. All of the dielectric properties such as the real and imaginary parts of dielectric constants (epsilon', epsilon''), electric moduli (M' and M"), loss tangent (tan delta), and sigma(ac), values were found to be strong functions of temperature and applied bias voltage. These changes become considerably high especially in the depletion region. In addition, the voltage dependent Rs values were obtained and they increased with decreasing temperature C-V-T and G/omega-V-T measurements confirmed that R-s, D-it, and PVC+TCNQ layers are very important parameters that strongly influence both dielectric properties and sigma(ac) of structures. (C) 2014 Elsevier Ltd. All rights reserved.en_US
dc.identifier.doi10.1016/j.mssp.2014.03.051en_US
dc.identifier.endpage42en_US
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage37en_US
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2014.03.051
dc.identifier.urihttps://hdl.handle.net/20.500.12684/4758
dc.identifier.volume28en_US
dc.identifier.wosWOS:000345645000007en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Sci Ltden_US
dc.relation.ispartofMaterials Science In Semiconductor Processingen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAu/PVC plus TCNQ/p-Si structuresen_US
dc.subjectDielectric properties and ac conductivityen_US
dc.subjectElectrical propertiesen_US
dc.subjectTemperature and voltage dependencesen_US
dc.subjectSeries resistanceen_US
dc.subjectArrhenius ploten_US
dc.titleTemperature and voltage dependences of dielectric properties and ac electrical conductivity in Au/PVC plus TCNQ/p-Si structuresen_US
dc.typeArticleen_US

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