Temperature and voltage dependences of dielectric properties and ac electrical conductivity in Au/PVC plus TCNQ/p-Si structures
Yükleniyor...
Dosyalar
Tarih
2014
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Sci Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Dielectric properties and ac conductivity (sigma(ac)) of Au/PVC+TCNQ/p-Si structures have been investigated in the wide temperature range of 80-420 K using capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements at 1 MlHz. It has been found that the forward bias C-V plots exhibit a distinct peak especially at a high temperature. Effects of the series resistance (R-s), interfacial PVC+TCNQ layer and the density distribution of interfaces'traps (D-it) on the electrical peak and the dielectric properties were investigated in detail. All of the dielectric properties such as the real and imaginary parts of dielectric constants (epsilon', epsilon''), electric moduli (M' and M"), loss tangent (tan delta), and sigma(ac), values were found to be strong functions of temperature and applied bias voltage. These changes become considerably high especially in the depletion region. In addition, the voltage dependent Rs values were obtained and they increased with decreasing temperature C-V-T and G/omega-V-T measurements confirmed that R-s, D-it, and PVC+TCNQ layers are very important parameters that strongly influence both dielectric properties and sigma(ac) of structures. (C) 2014 Elsevier Ltd. All rights reserved.
Açıklama
International Semiconductor Science and Technology Conference (ISSTC) -- JAN 13-15, 2014 -- Istanbul, TURKEY
/0000-0002-8211-8736
WOS: 000345645000007
/0000-0002-8211-8736
WOS: 000345645000007
Anahtar Kelimeler
Au/PVC plus TCNQ/p-Si structures, Dielectric properties and ac conductivity, Electrical properties, Temperature and voltage dependences, Series resistance, Arrhenius plot
Kaynak
Materials Science In Semiconductor Processing
WoS Q Değeri
Q2
Scopus Q Değeri
Q1
Cilt
28
