Fabrication of photonic sensor-based Al/(Ag:ZnO:rGO-PVA)/n-Si/Al structures and investigation of their charge transport mechanisms in wide voltage and illumination ranges

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dc.contributor.authorYeriskin, Seckin Altindal
dc.contributor.authorDemir, Gulcin Ersoz
dc.date.accessioned2026-07-01T11:39:56Z
dc.date.available2026-07-01T11:39:56Z
dc.date.issued2026
dc.departmentDüzce Üniversitesi
dc.description.abstractIn this study, photonic sensor-based Al/(AgZnO:rGO(5%)-PVA)/n-Si/Al structures were fabricated and characterized through comprehensive electrical/optoelectronic measurements. Current-voltage (I-V) characteristics were investigated in dark and under various illumination-intensities (20-100 mW/cm(2)), while capacitance/conductance-voltage (C-V, G/omega-V) measurements were performed at 1 MHz and spanning -2.5 V to + 4.5 V. The fabricated-device exhibited pronounced rectifying-ratio (RR=I-for./I-rev.) exceeding four-orders of magnitude. Key electrical-parameters extracted included ideality-factors of 6.573-7.983 (Region-I) and 13.671-15.451 (Region-II), barrier heights (BHs) of 0.676-0.646 eV (I-V) and 1.124 eV (C-V), doping donor-concentration of 5.08 & times; 10(17)cm(-3), and depletion-width (W-d) of 159 nm. Barrier-height decreased linearly with light (Phi(B0)=-2.95 & times;10(-4)P+0.675 eV), yielding an illumination-coefficient (-2.95 & times;10(-4)eV/(mW/cm(2))) approaching silicon's temperature-coefficient (-4.73 & times;10(-4)eV/K). Photovoltaic parameters under 100 mW/cm(2) included a fill factor (FF) of 58% and an efficiency (tau) of 1.11%. Photocurrent exhibited supralinear power-law dependence (exponents 1.3054 at -2V, 1.2032 at 0 V), indicating interface-trap emptying and space-charge-region generation-recombination (GR) mechanisms. Series-resistance (R-s) decreased from 12.40 Omega to 10.61 Omega under illumination, while shunt-resistance (R-sh) dropped from 96.2k Omega to 0.491k Omega. Interface-state densities (N-ss) of 10(12)-10(13) eV(-1)cm(-2) accounted for elevated ideality factors. The composite interlayer, combining reduced graphene oxide (rGO) percolation pathways with AgZnO plasmonic enhancement, demonstrated a substantial bidirectional photo-response, establishing this architecture as promising for PS applications that are superior to conventional metal-insulator-semiconductor (MIS) structures.
dc.identifier.doi10.1016/j.sna.2026.118003
dc.identifier.issn0924-4247
dc.identifier.issn1873-3069
dc.identifier.scopus2-s2.0-105039110293
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1016/j.sna.2026.118003
dc.identifier.urihttps://hdl.handle.net/20.500.12684/23556
dc.identifier.volume408
dc.identifier.wosWOS:001781197000001
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Science Sa
dc.relation.ispartofSensors and Actuators A-Physical
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20260623
dc.subject[Keyword Not Available]
dc.titleFabrication of photonic sensor-based Al/(Ag:ZnO:rGO-PVA)/n-Si/Al structures and investigation of their charge transport mechanisms in wide voltage and illumination ranges
dc.typeArticle

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