Fabrication of photonic sensor-based Al/(Ag:ZnO:rGO-PVA)/n-Si/Al structures and investigation of their charge transport mechanisms in wide voltage and illumination ranges
Küçük Resim Yok
Tarih
2026
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Science Sa
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In this study, photonic sensor-based Al/(AgZnO:rGO(5%)-PVA)/n-Si/Al structures were fabricated and characterized through comprehensive electrical/optoelectronic measurements. Current-voltage (I-V) characteristics were investigated in dark and under various illumination-intensities (20-100 mW/cm(2)), while capacitance/conductance-voltage (C-V, G/omega-V) measurements were performed at 1 MHz and spanning -2.5 V to + 4.5 V. The fabricated-device exhibited pronounced rectifying-ratio (RR=I-for./I-rev.) exceeding four-orders of magnitude. Key electrical-parameters extracted included ideality-factors of 6.573-7.983 (Region-I) and 13.671-15.451 (Region-II), barrier heights (BHs) of 0.676-0.646 eV (I-V) and 1.124 eV (C-V), doping donor-concentration of 5.08 & times; 10(17)cm(-3), and depletion-width (W-d) of 159 nm. Barrier-height decreased linearly with light (Phi(B0)=-2.95 & times;10(-4)P+0.675 eV), yielding an illumination-coefficient (-2.95 & times;10(-4)eV/(mW/cm(2))) approaching silicon's temperature-coefficient (-4.73 & times;10(-4)eV/K). Photovoltaic parameters under 100 mW/cm(2) included a fill factor (FF) of 58% and an efficiency (tau) of 1.11%. Photocurrent exhibited supralinear power-law dependence (exponents 1.3054 at -2V, 1.2032 at 0 V), indicating interface-trap emptying and space-charge-region generation-recombination (GR) mechanisms. Series-resistance (R-s) decreased from 12.40 Omega to 10.61 Omega under illumination, while shunt-resistance (R-sh) dropped from 96.2k Omega to 0.491k Omega. Interface-state densities (N-ss) of 10(12)-10(13) eV(-1)cm(-2) accounted for elevated ideality factors. The composite interlayer, combining reduced graphene oxide (rGO) percolation pathways with AgZnO plasmonic enhancement, demonstrated a substantial bidirectional photo-response, establishing this architecture as promising for PS applications that are superior to conventional metal-insulator-semiconductor (MIS) structures.
Açıklama
Anahtar Kelimeler
[Keyword Not Available]
Kaynak
Sensors and Actuators A-Physical
WoS Q Değeri
Q1
Scopus Q Değeri
Q1
Cilt
408
