Preparation and electrical characterization of Au/n-Si (110) structure with PVA-nickel acetate composite film interfacial layer

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dc.contributor.authorTunç, Tuncay
dc.contributor.authorGökçen, Muharrem
dc.date.accessioned2020-04-30T23:21:31Z
dc.date.available2020-04-30T23:21:31Z
dc.date.issued2012
dc.departmentDÜ, Fen-Edebiyat Fakültesi, Fizik Bölümüen_US
dc.descriptionTunc, Tuncay/0000-0002-3576-2633; Gokcen, Muharrem/0000-0001-9063-3028; Fen Bilgisi Egitimi, Aksaray Egitim/0000-0001-8976-571Xen_US
dc.descriptionWOS: 000311318000008en_US
dc.description.abstractTwo types of Schottky diodes, with and without PVA (Ni-doped) layer, were fabricated to investigate whether or not the PVA (Ni-doped) layer is effective on some electrical parameters such as ideality factor n, barrier height Phi(B0), series resistance R-s, and interface state density N-SS. PVA (Ni-doped) microdrops film was deposited on n-type silicon substrate. SDs with and without PVA (Ni-doped) layer, namely MPS and MS diodes, respectively, were investigated by current-voltage (I-V) measurements at room temperature. Also, series resistance calculations have been performed using Cheung method. The values of n and R-s obtained for MPS are found higher compared to those of MS. This is attributed to the particular distribution of N-SS, and inhomogeneity of barrier height and interfacial layer at metal/semiconductor (M/S) interface. Au/PVA(Ni-doped)/n-Si diode (MPS) exhibits a photovoltaic behavior with an open circuit voltage V-oc 0.42 V and short-circuit current I-SC 33.2 mu A under 100 mW/cm(2) illumination intensity. The obtained photovoltaic results indicate that the MPS diode can be used as an efficient material for applications in optoelectronic applications such as solar cells and photodiode devices.en_US
dc.description.sponsorshipDuzce University Scientific Research ProjectDuzce University [2010.05.02.056]en_US
dc.description.sponsorshipThis study is supported by Duzce University Scientific Research Project (project number 2010.05.02.056).en_US
dc.identifier.doi10.1177/0021998311433342en_US
dc.identifier.endpage2850en_US
dc.identifier.issn0021-9983
dc.identifier.issn1530-793X
dc.identifier.issue22en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage2843en_US
dc.identifier.urihttps://doi.org/10.1177/0021998311433342
dc.identifier.urihttps://hdl.handle.net/20.500.12684/4206
dc.identifier.volume46en_US
dc.identifier.wosWOS:000311318000008en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSage Publications Ltden_US
dc.relation.ispartofJournal Of Composite Materialsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAu/PVA/n-Sien_US
dc.subjectseries resistanceen_US
dc.subjectillumination effecten_US
dc.subjectinterface statesen_US
dc.subjectorganic interfacial layeren_US
dc.titlePreparation and electrical characterization of Au/n-Si (110) structure with PVA-nickel acetate composite film interfacial layeren_US
dc.typeArticleen_US

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