Preparation and electrical characterization of Au/n-Si (110) structure with PVA-nickel acetate composite film interfacial layer
Yükleniyor...
Dosyalar
Tarih
2012
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Sage Publications Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Two types of Schottky diodes, with and without PVA (Ni-doped) layer, were fabricated to investigate whether or not the PVA (Ni-doped) layer is effective on some electrical parameters such as ideality factor n, barrier height Phi(B0), series resistance R-s, and interface state density N-SS. PVA (Ni-doped) microdrops film was deposited on n-type silicon substrate. SDs with and without PVA (Ni-doped) layer, namely MPS and MS diodes, respectively, were investigated by current-voltage (I-V) measurements at room temperature. Also, series resistance calculations have been performed using Cheung method. The values of n and R-s obtained for MPS are found higher compared to those of MS. This is attributed to the particular distribution of N-SS, and inhomogeneity of barrier height and interfacial layer at metal/semiconductor (M/S) interface. Au/PVA(Ni-doped)/n-Si diode (MPS) exhibits a photovoltaic behavior with an open circuit voltage V-oc 0.42 V and short-circuit current I-SC 33.2 mu A under 100 mW/cm(2) illumination intensity. The obtained photovoltaic results indicate that the MPS diode can be used as an efficient material for applications in optoelectronic applications such as solar cells and photodiode devices.
Açıklama
Tunc, Tuncay/0000-0002-3576-2633; Gokcen, Muharrem/0000-0001-9063-3028; Fen Bilgisi Egitimi, Aksaray Egitim/0000-0001-8976-571X
WOS: 000311318000008
WOS: 000311318000008
Anahtar Kelimeler
Au/PVA/n-Si, series resistance, illumination effect, interface states, organic interfacial layer
Kaynak
Journal Of Composite Materials
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
46
Sayı
22
