Correlation between barrier height and ideality factor in identically prepared diodes of Al/Bi4Ti3O12/p-Si (MFS) structure with barrier inhomogeneity

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dc.contributor.authorÇetinkaya, H.G.
dc.contributor.authorYıldırım, Mert
dc.contributor.authorDurmuş, Perihan
dc.contributor.authorAltındal, Şemsettin
dc.date.accessioned2020-04-30T22:41:48Z
dc.date.available2020-04-30T22:41:48Z
dc.date.issued2017
dc.departmentDÜ, Mühendislik Fakültesi, Mekatronik Mühendisliği Bölümüen_US
dc.descriptionYILDIRIM, Mert/0000-0002-8526-1802en_US
dc.descriptionWOS: 000405252400087en_US
dc.description.abstractThis study aims to investigate electrical characteristics of identically prepared metal-ferroelectric-semiconductor (MFS) structures. Therefore a total number of 58 diodes were fabricated in the form of Al/Bi4Ti3O12/P-Si structure and then current-voltage (I-V) and admittance-voltage (C-V and G/omega-V) measurements were performed at room temperature. It was found that zero bias barrier height (Phi(Bo)) and ideality factor (n) show diode-to-diode variance. The value of n varied from 2.7 to 5.3 and such high values were attributed to the barrier height (BH) inhomogeneity, interfacial layer and surface states (N-ss). Similar behavior was observed for series resistance (R-s) values which were obtained by using Nicollian-Brews method. Other electrical parameters such as doping concentration of acceptor atoms (N-A), Fermi energy (E-F), and BH (Phi(B)) were extracted from reverse bias C-2-V characteristics. The experimental values of BH obtained from the forward bias I-V and reverse bias C-2-V characteristics varied from 0.69 to 0.84 eV and 0.75-0.93 eV and statistical analysis revealed mean BH values as 0.716 eV and 0.818 eV, respectively. We believe the variations in the electrical parameters are due to inhomogeneous interfacial layer and BH, non-uniformity of the interfacial traps or dislocations, and grain boundaries. (C) 2017 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.jallcom.2017.06.037en_US
dc.identifier.endpage756en_US
dc.identifier.issn0925-8388
dc.identifier.issn1873-4669
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage750en_US
dc.identifier.urihttps://doi.org/10.1016/j.jallcom.2017.06.037
dc.identifier.urihttps://hdl.handle.net/20.500.12684/3250
dc.identifier.volume721en_US
dc.identifier.wosWOS:000405252400087en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Science Saen_US
dc.relation.ispartofJournal Of Alloys And Compoundsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectBi4Ti3O12 (BTO)en_US
dc.subjectIdentically prepared Al/Bi4Ti3O12/P-Si (MFS)en_US
dc.subjectstructuresen_US
dc.subjectCorrelation between BH and nen_US
dc.subjectForward and reverse bias I-V, C-V and G/omega-en_US
dc.subjectV characteristicsen_US
dc.titleCorrelation between barrier height and ideality factor in identically prepared diodes of Al/Bi4Ti3O12/p-Si (MFS) structure with barrier inhomogeneityen_US
dc.typeArticleen_US

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