Correlation between barrier height and ideality factor in identically prepared diodes of Al/Bi4Ti3O12/p-Si (MFS) structure with barrier inhomogeneity
Yükleniyor...
Dosyalar
Tarih
2017
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Science Sa
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
This study aims to investigate electrical characteristics of identically prepared metal-ferroelectric-semiconductor (MFS) structures. Therefore a total number of 58 diodes were fabricated in the form of Al/Bi4Ti3O12/P-Si structure and then current-voltage (I-V) and admittance-voltage (C-V and G/omega-V) measurements were performed at room temperature. It was found that zero bias barrier height (Phi(Bo)) and ideality factor (n) show diode-to-diode variance. The value of n varied from 2.7 to 5.3 and such high values were attributed to the barrier height (BH) inhomogeneity, interfacial layer and surface states (N-ss). Similar behavior was observed for series resistance (R-s) values which were obtained by using Nicollian-Brews method. Other electrical parameters such as doping concentration of acceptor atoms (N-A), Fermi energy (E-F), and BH (Phi(B)) were extracted from reverse bias C-2-V characteristics. The experimental values of BH obtained from the forward bias I-V and reverse bias C-2-V characteristics varied from 0.69 to 0.84 eV and 0.75-0.93 eV and statistical analysis revealed mean BH values as 0.716 eV and 0.818 eV, respectively. We believe the variations in the electrical parameters are due to inhomogeneous interfacial layer and BH, non-uniformity of the interfacial traps or dislocations, and grain boundaries. (C) 2017 Elsevier B.V. All rights reserved.
Açıklama
YILDIRIM, Mert/0000-0002-8526-1802
WOS: 000405252400087
WOS: 000405252400087
Anahtar Kelimeler
Bi4Ti3O12 (BTO), Identically prepared Al/Bi4Ti3O12/P-Si (MFS), structures, Correlation between BH and n, Forward and reverse bias I-V, C-V and G/omega-, V characteristics
Kaynak
Journal Of Alloys And Compounds
WoS Q Değeri
Q1
Scopus Q Değeri
Q1
Cilt
721
