F4-TCNQ concentration dependence of the current-voltage characteristics in the Au/P3HT:PCBM:F4-TCNQ/n-Si (MPS) Schottky barrier diode

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dc.contributor.authorYağlıoğlu, E.
dc.contributor.authorÖzmen, Özge Tüzün
dc.date.accessioned2020-05-01T12:10:02Z
dc.date.available2020-05-01T12:10:02Z
dc.date.issued2014
dc.departmentDÜ, Fen-Edebiyat Fakültesi, Fizik Bölümüen_US
dc.descriptionWOS: 000345124600070en_US
dc.description.abstractIn this study, we investigate some main electrical parameters of the gold/poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester:2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon (Au/P3HT:PCBM:F4-TCNQ/nSi) metal-polymer-semiconductor (MPS) Schottky barrier diode (SBD) in terms of the effects of F4-TCNQ concentration (0%, 1%, and 2%). F4-TCNQ-doped P3HT:PCBM is fabricated to figure out the p-type doping effect on the device performance. The main electrical parameters, such as ideality factor (n), barrier height (Phi(B0)), series resistance (R-s), shunt resistance (R-sh), and density of interface states (N-ss) are determined from the forward and reverse bias current-voltage (I-V) characteristics in the dark and at room temperature. The values of n, R-s, Phi(B0), and N-ss are significantly reduced by using the 1% F4-TCNQ doping in P3HT:PCBM:F4-TCNQ organic blend layer, additionally, the carrier mobility and current are increased by the soft (1%) doping. The most ideal values of electrical parameters are obtained for 1% F4-TCNQ used diode. On the other hand, the carrier mobility and current for the hard doping (2%) become far away from the ideal diode values due to the unbalanced generation of holes/electrons and doping-induced disproportion when compared with 1% F4-TCNQ doping. These results show that the electrical properties of MPS SBDs strongly depend on the F4-TCNQ doping and doping concentration of interfacial P3HT:PCBM:F4-TCNQ organic layer. Moreover, the soft F4-TCNQ doping concentration (1%) in P3HT:PCBM:F4-TCNQ organic layer significantly improves the electrical characteristics of the Au/P3HT:PCBM:F4-TCNQ/n-Si (MPS) SBDs which enables the fabricating of high-quality electronic and optoelectronic devices.en_US
dc.identifier.doi10.1088/1674-1056/23/11/117306en_US
dc.identifier.issn1674-1056
dc.identifier.issn1741-4199
dc.identifier.issue11en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.urihttps://doi.org/10.1088/1674-1056/23/11/117306
dc.identifier.urihttps://hdl.handle.net/20.500.12684/5945
dc.identifier.volume23en_US
dc.identifier.wosWOS:000345124600070en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherIop Publishing Ltden_US
dc.relation.ispartofChinese Physics Ben_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectP3HT:PCBM:F4-TCNQ interfacial organic layeren_US
dc.subjectF4-TCNQ doping concentrationen_US
dc.subjectSchottky barrier diodesen_US
dc.subjectI-V characteristicsen_US
dc.titleF4-TCNQ concentration dependence of the current-voltage characteristics in the Au/P3HT:PCBM:F4-TCNQ/n-Si (MPS) Schottky barrier diodeen_US
dc.typeArticleen_US

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