F4-TCNQ concentration dependence of the current-voltage characteristics in the Au/P3HT:PCBM:F4-TCNQ/n-Si (MPS) Schottky barrier diode

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Küçük Resim

Tarih

2014

Dergi Başlığı

Dergi ISSN

Cilt Başlığı

Yayıncı

Iop Publishing Ltd

Erişim Hakkı

info:eu-repo/semantics/closedAccess

Özet

In this study, we investigate some main electrical parameters of the gold/poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester:2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon (Au/P3HT:PCBM:F4-TCNQ/nSi) metal-polymer-semiconductor (MPS) Schottky barrier diode (SBD) in terms of the effects of F4-TCNQ concentration (0%, 1%, and 2%). F4-TCNQ-doped P3HT:PCBM is fabricated to figure out the p-type doping effect on the device performance. The main electrical parameters, such as ideality factor (n), barrier height (Phi(B0)), series resistance (R-s), shunt resistance (R-sh), and density of interface states (N-ss) are determined from the forward and reverse bias current-voltage (I-V) characteristics in the dark and at room temperature. The values of n, R-s, Phi(B0), and N-ss are significantly reduced by using the 1% F4-TCNQ doping in P3HT:PCBM:F4-TCNQ organic blend layer, additionally, the carrier mobility and current are increased by the soft (1%) doping. The most ideal values of electrical parameters are obtained for 1% F4-TCNQ used diode. On the other hand, the carrier mobility and current for the hard doping (2%) become far away from the ideal diode values due to the unbalanced generation of holes/electrons and doping-induced disproportion when compared with 1% F4-TCNQ doping. These results show that the electrical properties of MPS SBDs strongly depend on the F4-TCNQ doping and doping concentration of interfacial P3HT:PCBM:F4-TCNQ organic layer. Moreover, the soft F4-TCNQ doping concentration (1%) in P3HT:PCBM:F4-TCNQ organic layer significantly improves the electrical characteristics of the Au/P3HT:PCBM:F4-TCNQ/n-Si (MPS) SBDs which enables the fabricating of high-quality electronic and optoelectronic devices.

Açıklama

WOS: 000345124600070

Anahtar Kelimeler

P3HT:PCBM:F4-TCNQ interfacial organic layer, F4-TCNQ doping concentration, Schottky barrier diodes, I-V characteristics

Kaynak

Chinese Physics B

WoS Q Değeri

Q2

Scopus Q Değeri

Q3

Cilt

23

Sayı

11

Künye