Conductance and Density of Interface State Characteristics of Mn Doped CdO Photodiodes

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dc.contributor.authorKoç, Mümin Mehmet
dc.date.accessioned2023-04-10T20:23:52Z
dc.date.available2023-04-10T20:23:52Z
dc.date.issued2020
dc.departmentRektörlük, Rektörlüğe Bağlı Birimler, Düzce Üniversitesi Dergilerien_US
dc.description.abstractSol-gel technique was used to fabricate cadmium oxide and manganese doped cadmium oxide solutions whichwere used to produce thin films. 10% manganese doped, %6 manganese doped, %0.2 manganese doped andundoped cadmium oxide solutions were spin-coated on Si wafers to fabricate photodiodes. Conductance –voltage (G - V) measurements were performed. Mn doping enhances the conductance properties of the CdOdiodes. Increased conductance characteristics were obtained with increasing AC signal frequency. Correctiveconductance – voltage (Gadj – V) graphs were obtained using conductance voltage graphs. Increased correctiveconductance (Gadj) values were obtained with increasing AC signal frequency. Using corrective conductance –voltage (Gadj – V) and conductance – voltage (G - V) data density of interface states (Dit) characteristics of thediodes were assessed. Different density of state values was obtained for the different photodiodes. The densityof state values was found to increase with increased Mn doping.en_US
dc.identifier.doi10.29130/dubited.641738
dc.identifier.endpage939en_US
dc.identifier.issn2148-2446
dc.identifier.issue1en_US
dc.identifier.startpage925en_US
dc.identifier.trdizinid390275en_US
dc.identifier.urihttp://doi.org/10.29130/dubited.641738
dc.identifier.urihttps://search.trdizin.gov.tr/yayin/detay/390275
dc.identifier.urihttps://hdl.handle.net/20.500.12684/11605
dc.identifier.volume8en_US
dc.indekslendigikaynakTR-Dizinen_US
dc.language.isoenen_US
dc.relation.ispartofDüzce Üniversitesi Bilim ve Teknoloji Dergisi
dc.relation.publicationcategoryMakale - Ulusal Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.titleConductance and Density of Interface State Characteristics of Mn Doped CdO Photodiodesen_US
dc.typeArticleen_US

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