Conductance and Density of Interface State Characteristics of Mn Doped CdO Photodiodes
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Tarih
2020
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Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
Sol-gel technique was used to fabricate cadmium oxide and manganese doped cadmium oxide solutions whichwere used to produce thin films. 10% manganese doped, %6 manganese doped, %0.2 manganese doped andundoped cadmium oxide solutions were spin-coated on Si wafers to fabricate photodiodes. Conductance –voltage (G - V) measurements were performed. Mn doping enhances the conductance properties of the CdOdiodes. Increased conductance characteristics were obtained with increasing AC signal frequency. Correctiveconductance – voltage (Gadj – V) graphs were obtained using conductance voltage graphs. Increased correctiveconductance (Gadj) values were obtained with increasing AC signal frequency. Using corrective conductance –voltage (Gadj – V) and conductance – voltage (G - V) data density of interface states (Dit) characteristics of thediodes were assessed. Different density of state values was obtained for the different photodiodes. The densityof state values was found to increase with increased Mn doping.
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Anahtar Kelimeler
Kaynak
Düzce Üniversitesi Bilim ve Teknoloji Dergisi
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Cilt
8
Sayı
1
