Investigation of the inhomogeneous barrier height of an Au/Bi4Ti3O12/n-Si structure through Gaussian distribution of barrier height

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dc.contributor.authorGökçen, Muharrem
dc.contributor.authorYıldırım, Mert
dc.date.accessioned2020-04-30T23:18:41Z
dc.date.available2020-04-30T23:18:41Z
dc.date.issued2012
dc.departmentDÜ, Fen-Edebiyat Fakültesi, Fizik Bölümüen_US
dc.descriptionYILDIRIM, Mert/0000-0002-8526-1802; Gokcen, Muharrem/0000-0001-9063-3028en_US
dc.descriptionWOS: 000314221400083en_US
dc.description.abstractA Au/Bi4Ti3O12/n-Si structure is fabricated in order to investigate its current-voltage (I-V) characteristics in a temperature range of 300 K-400 K. Obtained I-V data are evaluated by the thermionic emission (TE) theory. Zero-bias barrier height (Phi(B0)) and ideality factor (n) calculated from I-V characteristics, are found to be temperature-dependent such that Phi(B0) increases with temperature increasing, whereas n decreases. The obtained temperature dependence of Phi(B0) and linearity in Phi(B0) versus the n plot, together with a lower barrier height and Richardson constant values obtained from the Richardson plot, indicate that the barrier height of the structure is inhomogeneous in nature. Therefore, I-V characteristics are explained on the basis of Gaussian distribution of barrier height.en_US
dc.description.sponsorshipDuzce UniversityDuzce University [2010.05.02.056, 2012.05.02.110]en_US
dc.description.sponsorshipProject supported by the Duzce University Scientific Research Project (Grant Nos. 2010.05.02.056 and 2012.05.02.110).en_US
dc.identifier.doi10.1088/1674-1056/21/12/128502en_US
dc.identifier.issn1674-1056
dc.identifier.issn1741-4199
dc.identifier.issue12en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.urihttps://doi.org/10.1088/1674-1056/21/12/128502
dc.identifier.urihttps://hdl.handle.net/20.500.12684/3480
dc.identifier.volume21en_US
dc.identifier.wosWOS:000314221400083en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherIop Publishing Ltden_US
dc.relation.ispartofChinese Physics Ben_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectBi4Ti3O12en_US
dc.subjectI-V characterizationen_US
dc.subjecttemperature dependenceen_US
dc.subjectGaussian distributionen_US
dc.titleInvestigation of the inhomogeneous barrier height of an Au/Bi4Ti3O12/n-Si structure through Gaussian distribution of barrier heighten_US
dc.typeArticleen_US

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